Journal of Korean Vacuum Science & Technology

The Korean Vacuum Society (한국진공학회)
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Growth of InGaN/GaN Multiple Quantum Wells by Metalorganic Chemical Vapor Deposition and Their Structural and Optoelectronic Properties

  • Kim, H.J. (School of Materials Science and Engineering, Seoul National University) ;
  • Kwon, S.-Y. (School of Materials Science and Engineering, Seoul National University) ;
  • Yim, S. (School of Materials Science and Engineering, Seoul National University) ;
  • Na, H. (School of Materials Science and Engineering, Seoul National University) ;
  • Kee, B. (Nanotron Technologies, Inc.) ;
  • Yoon, E. (School of Materials Science and Engineering, Seoul National University)
  • Published : 2002.12.01
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Abstract

InGaN/GaN multiple quantum wells (MQWs) were grown by metalorganic chemical vapor deposition and their structural and optical properties were studied. When the average In content was increased by increasing TMIn flow rate, PL measurement showed little change in PL peak position and large increase in PL intensity instead. Large changes in PL peak position could be achieved by changing growth temperature. We propose the formation of fixed In content, highly In-rich quantum dot-like phases in InGaN MQWs driven by spinodal decomposition.

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