• Journal of the Korean Vacuum Society
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• v.16 no.4
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• pp.279-285
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• 2007

We have demonstrated structural evolution and optical properties of the Si-NWs on Si (111) substrates with synthesized nanoscale Au-Si islands by rapid thermal chemical vapor deposition(RTCVD). Au nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. Si-NWs were grown by a mixture gas of $SiH_4\;and\;H_2$ at pressures of $0.1{\sim}1.0$Torr and temperatures of $450{\sim}650^{\circ}C$. SEM measurements showed the formation of Si-NWs well-aligned vertically for Si (111) surfaces. The resulting NWs are 30-100nm in diameter and $0.4{\sim}12um$ in length depending on growth conditions. HR-TEM measurements indicated that Si-NWs are single crystals convered with about 3nm thick layers of amorphous oxide. In addition, optical properties of NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si optical phonon peak with a shoulder at $480cm^{-1}$ were observed in Raman spectra of Si-NWs.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.98-103
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• 2019

Optical filters to control light wavelength of displays or cameras are fabricated by multi-layer stacking process of low and high index thin films. The process of multi-layer stacking of thin films has received much attention as an optimal process for effective manufacturing in the optical filter industry. However, multi-layer processing has disadvantages of complicated thin film process, and difficulty of precise control of film morphology and material selection, all of which are critical for transmittance and coloring effect on filters. In this study, the composite $TiO_2$, which can be used to control of UV absorption, coated on nano hollow silica sol, was synthesized as a coating material for optical filters. Furthermore, systematic analysis of the process parameters during the chemical reaction, and of the structural properties of the coating solutions was performed using SEM, TEM, XRD and photo spectrometry. From the structural analysis, we found that the 85 nm nano hollow silica with 2.5 nm $TiO_2$ shell formation was successfully synthesized at proper pH control and titanium butoxide content. Photo luminescence characteristics, excited by UV irradiation, show that stable absorption of 350 nm-light, correlated with a 3.54 eV band gap, existed for the $TiO_2$ shell-nano hollow silica reacted with 8.8 mole titanium butoxide solution. Transmittance observed on substrate of the $TiO_2$ shell-nano hollow silica showed effective absorption of 200-300 nm UV light without deterioration of visible light transparency.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.399-405
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• 2020

In the present investigation we show the effect of Al doping on the length, size, shape, morphology, and sensing property of ZnO nanorods. Effect of Al doping ultimately leads to tuning of electrical and optical properties of ZnO nanorods. Undoped and Al-doped well aligned ZnO nanorods are grown on sputtered ZnO/SiO₂/Si (100) pre-grown seed layer substrates by hydrothermal method. The molar ratio of dopant (aluminium nitrate) in the solution, [Al/Zn], is varied from 0.1 % to 3 %. To extract structural and microstructural information we employ field emission scanning electron microscopy and X-ray diffraction techniques. The prepared ZnO nanorods show preferred orientation of ZnO <0001> and are well aligned vertically. The effects of Al doping on the electrical and optical properties are observed by Hall measurement and photoluminescence spectroscopy, respectively, at room temperature. We observe that the diameter and resistivity of the nanorods reach their lowest levels, the carrier concentration becomes high, and emission peak tends to approach the band edge emission of ZnO around 0.5% of Al doping. Sensing behavior of the grown ZnO nanorod samples is tested for H₂ gas. The 0.5 mol% Al-doped sample shows highest sensitivity values of ~ 60 % at 250 ℃ and ~ 50 % at 220 ℃.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.134-140
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• 2019

Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.476-480
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• 2004

AZO (Al-doped ZnO) thin films were deposited on glass by pulsed magnetron sputtering method, and their structural, electrical and optical properties were investigated. XRD patterns showed that a highly c-axis preferred AZO film was grown in perpendicular to the substrate when pulse frequency of 30 ㎑ was applied to the target. Microstructure of thin films showed that the fibrous grain of tight dome shape was grown. The deposition rate decreased linearly with increase of pulse frequency, and the lowest resistivity was 8.67${\times}$10$\^$-4/ $\Omega$-cm for the film prepared at pulse frequency of 30 ㎑. The optical transmittance spectra of the films showed a very high transmittance of 85∼90%, within visible wavelength region and exhibited the absorption edge of about 350 nm. The characteristics of the low electrical resistivity and high optical transmittance of AXO films suggested a possibility for the application to transparent conducting oxides.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.357-362
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• 2007

AZO(Aluminum-doped Zinc Oxide) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with ITO(Indium Tin Oxide). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$ for 2 hr with $N_2$ atmosphere. The AZO films were used as an anode contact to fabricate OLEDs(Organic Light Emitting Diodes). OLEDs with $AZO/TPD/Alq_3/Al$ configuration were fabricated by thermal evaporation. We investigated that the electric, structural and optical properties of AZO thin films, which measured using the methods of XRD, SEM, Hall measurement and Spectrophotometer. The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.552-557
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• 2006

Electrical, optical, surface, and structural properties of amorphous indium-zinc-oxide (a-IZO) grown by box cathode sputtering (BCS) were compared with crystalline indium-tin-oxide (c-ITO) anode films grown by conventional DC sputtering (DCS). Although x-ray diffraction plot of BCS-grown IZO film shows amorphous structure, the optical and electrical properties of a-IZO is comparable to those of c-ITO film. In particular, BCS-grown IZO films shows very smooth surface without defects such as pin hole and cracks because most of the energy of the sputtered atoms was confined in high density plasma region in box cathode gun. Furthermore polymer organic light emitting diodes (POLED) with the a-IZO anode film shows better electrical properties than that of POLED with the c-ITO anode film due to high work function and smooth surface of a-IZO. This suggested that BCS-grown a-IZO film is promising anode materials substituting conventional c-ITO anode in OLED and flexible displays.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.568-573
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• 2011

AZO (Al doped ZnO) thin films were deposited on the quartz substrates with thickness variation from 25 to 300 nm by using PLD (pulsed laser deposition). XRD (x-ray diffractometer), SPM (scanning probe microscopy), Hall effect measurement and uv-visible spectrophotometer were employed to investigate the structural, morphological, electrical and optical properties of the thin films. XRD results demonstrated that films were preferrentially oriented along the c-axis and crystallinity of film was improved with increase of film thickness. As for the surface morphologies, the mean diameter and root mean square of grains were increased as the film thickness was increased. When the film thickness was 200 nm, the lowest resistivity of $4.25{\times}10^{-4}\;{\Omega}cm$ obtained with carrier concentration of $6.84{\times}10^{20}\;cm^{-3}$ and mobility of $21.4\;cm^2/V{\cdot}S$. All samples showed more than 80% of transmittance in the visible range. Upon these results, it is found that the samples thickness can affect their structural, morphological, optical and electrical properties. This study suggests that the resistivity can be improved by controlling film thickness.