Effect of Oxygen Annealing on the Structural and Optical Properties of Sputter-deposited Vanadium Oxide Thin Films

스퍼터링으로 퇴적시킨 바나듐 산화막의 구조적, 광학적 특성에 미치는 산소 어닐링의 효과

  • 최복길 (공주대학교 정보통신공학부) ;
  • 최창규 (서울산업대학교 전기공학과) ;
  • 김성진 (경남대학교 전기전자공학부)
  • Published : 2000.11.01

Abstract

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

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