• 한국표면공학회지
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• 제41권4호
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• pp.129-133
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• 2008

Nitrogen and aluminum codoped ZnO(NAZO) thin films were grown on glass substrates with changing the nitrogen flow ratio by radio-frequency magnetron sputtering. The structural, optical, and electrical properties of the NAZO films were investigated. The surface morphologies and the structural properties of the thin films were analyzed by using the X-ray diffraction and scanning electron microscopy. The NAZO thin film, deposited at nitrogen flow ratio of 0%, showed a strongly c-axis preferred orientation and the lowest resistivity of $3.2{\times}10^{-3}{\Omega}cm$. The intensity of ZnO(002) diffraction peak was decreased gradually with increasing the nitrogen flow ratio. The optical properties of the films were measured by UV-VIS spectrophotometer and the optical transmittances for all the samples were found to be an average 90% in the visible range. Based on the transmittance value, the optical bandgap energy for the NAZO thin film deposited at nitrogen flow ratio of 0% was determined to be 3.46 eV. As for the electrical properties, the carrier concentration and the hall mobility were decreased, but the electrical resistivity was increased as the nitrogen flow ratio was increased.

• 센서학회지
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• 제27권4호
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• pp.249-253
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• 2018

Infrared transparent ZnS ceramics were synthesized through hydrothermal synthesis ($180^{\circ}C$, 70 h) and sintered using a hot press process at $750^{\circ}C-1000^{\circ}C$. We carried out x-ray diffraction, scanning electron microscopy, and Fourier transform-infrared spectroscopy to confirm the optical properties of the ZnS ceramics after sintering at various temperatures. The phase of ZnS nanopowders was a single phase (cubic) without the hexagonal phase. However, as sintering temperature increased, the formation and increment of hexagonal structures was confirmed. The ZnS ceramic sintered at a temperature of $750^{\circ}C$ showed poor transmittance because it was not completely sintered and because of the pore effect. The ZnS ceramic with the highest transmittance (approximately 69%) was sintered at $800^{\circ}C$. As sintering temperature increased, transmittance gradually decreased owing to the increase in the formation of the hexagonal phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.

• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.148-151
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• 2013

The control of Ga doping in ZnO nanowires (NWs) by physical vapor deposition has been implemented and characterized. Various Ga-doped ZnO NWs were grown using the vapor-liquid-solid (VLS) method, with Au catalyst on c-plane sapphire substrate by hot-walled pulsed laser deposition (HW-PLD), one of the physical vapor deposition methods. The structural, optical and electrical properties of Ga-doped ZnO NWs have been systematically analyzed, by changing Ga concentration in ZnO NWs. We observed stacking faults and different crystalline directions caused by increasing Ga concentration in ZnO NWs, using SEM and HR-TEM. A $D^0X$ peak in the PL spectra of Ga doped ZnO NWs that is sharper than that of pure ZnO NWs has been clearly observed, which indicated the substitution of Ga for Zn. The electrical properties of controlled Ga-doped ZnO NWs have been measured, and show that the conductance of ZnO NWs increased up to 3 wt% Ga doping. However, the conductance of 5 wt% Ga doped ZnO NWs decreased, because the mean free path was decreased, according to the increase of carrier concentration. This control of the structural, optical and electrical properties of ZnO NWs by doping, could provide the possibility of the fabrication of various nanowire based electronic devices, such as nano-FETs, nano-inverters, nano-logic circuits and customized nano-sensors.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.650-657
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• 2007

This paper had mentioned about CCP light source application for increasing the efficiency of Xe lamp the mercury-free lamp. In order to increase the efficiency of Xe EEFL, we designed and manufactured the lamp used by mixture gas of Xe, Ne and He. Also, we have analyzed the electrical and optical properties with the firing voltage, sustain voltage, paschen's curve, wall charge, and capacitance. As a result, the firing voltage decreased by increasing the ration of mixture gas. and, It is owing to include the gas with high ionization energy. The firing voltage decreased in condition happening the penning effect, Because the ion of metastable state created from penning effect, Which can encourage the ionization phenomena. Also, the wavelength of 467.12 is increase. because of the energy transition in the wavelength of 147 nm. therefore, we can know about the affection of phosphor with UV emission properties. Through an experiment, Xe 100 % and Xe 75 % confirmed same spectrum properties by each mixture gas ratio. In the case of Xe 50 %, spectrum properties appeared Xe discharge and Ne-He discharge. That analyzed an electrical and optical properties. Therefore, confirmed that is excellent because properties of firing voltage, wall charge, capacitance in Xe 50 %, Ne : He = 9 : 1. We offered parameter in inverter manufacture and lamp manufacture by electrical and optical properties.

• 센서학회지
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• 제32권1호
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• pp.51-54
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• 2023

We investigated a humidity sensor based on a polyimide-coated side-polished optical fiber. The polyimide film absorbed moisture, causing the resonant wavelength of the sensor to shift to a longer wavelength owing to the changes in the optical properties of the film. The experimental results showed that the resonant wavelength of the device shifted by 17-18 nm when relative humidity changed from 30% to 90%.

• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.600-604
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• 2005

We studied that structural and optical properties of ZnO films depend on oxygen contents. ZnO films were deposited on Si (111) substrates at room temperature by rf sputtering system and the thickness of films was 100 nm. The ZnO films were annealed in thermal furnace for 2 h at 800 and $900^{\circ}C$ in $H_2O,\;N_2$, and air ambient gases to control oxygen contents. We used AES, PL, XRD, AFM. As our result, crystal quality and luminescence improved until O/Zn is 1. However, when O/Zn ratio Is larger than 1, the structural and optical properties were getting worse.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.924-930
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• 1998

In this study, we describe the properties of an electro-optical modulator with CPW(coplanar waveguide) electrode fabricated on $LiNvO_3$ optical waveguide, that is applicable to optical communications. These optical modulators have features that use a buffer layer to reduce velocity mismatch between microwaves and optical wave as well as employ CPW to improve impedance and propagation mode mismatch between the electrode and the external circuits. And an annealed proton exchange technique for obtaining low-loss optical waveguides and good reproducibility was employed. Taking into consideration the mentioned background, to achieve the lower driving voltage of optical modulator, we have re-disigned the longer interaction length. And their device properties are discussed also. As a result, fabricated optical modulators of good 10Gps operation and low voltage(5.6V of the halfwave lengfth voltage) at an $1.5{\mu}m$ wavelength are achived with good reproducibility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.339-342
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• 1997

The optical properties of WO$_3$thin films deposited by RF magnetron reactive sputtering were studied. The substrate was an ITO(indium-tin-oxide) glass(100$\Omega$/ ). The optical properties are examined by different deposition conditions. RF power, substrate temperature, $O_2$concentraction. Ar flow rate, working pressure and thickness are 40~60W, 25~30$0^{\circ}C$, 10%, 54~72sccm, 5~20m7orr and 1200~2400$\AA$, respectively. All these films were colorless, light yellow and found to be amorphous in structure by X-ray diffraction analysis. When RF power, substrate temperature, $O_2$concentraction, Ar flow rate, working pressure and thickness are 40W, $25^{\circ}C$, 10%, 72sccm, 20mTorr and 2400$\AA$, respectively the values of transmittance of the WO$_3$thin films in visible region are about 80%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.133-134
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• 2007

We have studied the structural and electrical, optical properties of Al doped ZnO(AW) thin films which were fabricated by If reactive magnetron sputtering method with various heat treatment conditions. The heat temperatures of specimen fabrication were comning 7059 glass is $200{\sim}500^{\circ}C$ and Polyimide films are $200{\sim}350^{\circ}C$ respectively. The variations of the electrical and optical properties with heat treatment temperature and ambient were studied.