Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.347-347
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- 2012
Energy Band Structure, Electronic and Optical properties of Transparent Conducting Nickel Oxide Thin Films on $SiO_2$ /Si substrate
- Denny, Yus Rama (Department of Physics, Chungbuk National University) ;
- Lee, Sang-Su (Department of Physics, Chungbuk National University) ;
- Lee, Kang-Il (Department of Physics, Chungbuk National University) ;
- Lee, Sun-Young (Department of Physics, Chungbuk National University) ;
- Kang, Hee-Jae (Department of Physics, Chungbuk National University) ;
- Heo, Sung (Analytical Engineering Center, Samsung Advanced Institute of Technology) ;
- Chung, Jae-Gwan (Analytical Engineering Center, Samsung Advanced Institute of Technology) ;
- Lee, Jae-Cheol (Analytical Engineering Center, Samsung Advanced Institute of Technology)
- Published : 2012.02.08
Abstract
Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of