• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.401-402
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• 2007

The preparation and characteristics of ITO anode films grown using a linear facing target sputtering (FTS) technique for use in organic light emitting diodes (OLED) and flexible OLED is described. The electrical, optical, and work function of the ITO anode, which was prepared by linear FTS at room temperature, were comparable to those of commercial ITO anode films. In particular, linear FTS-grown ITO films shows very smooth surface without defects such as pin hole and cracks due to low substrate temperature. Furthermore OLED with the linear FTS-grown ITO anode film shows comparable electrical and optical properties to those of OLED with the commercial crystalline-ITO anode film. This suggested that linear FTS is promising thin film technology for preparing high quality anode film in OLEDs and flexible OLEDs.

• Korean Journal of Crystallography
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• 제14권2호
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• pp.105-109
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• 2003

Electrical properties of Ni/Au/p-GaN and optical properties of epitaxial GaN MQW LED on sapphire were characterized. At 20 mA forward bias, GaN MQW emitted in the blue at 470 nm. Current-voltage (I-V) characteristics were decreased linearly with the annealing temperature. The resistivity of Ni/Au contacts was found by TLM measurements to be of device quality (2×10/sup -1/Ωㆍcm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제28권10호
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• pp.620-624
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• 2015

We have studied structural, optical and electrical properties of In-Ga-doped ZnO (IGZO) thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 30, 50, 70, and 90 W respectively. All of the IGZO thin films transmittance in the visible range (400 nm ~ 800 nm) was above 83%. XRD analysis showed the IGZO thin films amorphous structure of the thin films without any peak. And also IGZO thin film have low resistivity ($1.99{\times}10^{-3}{\Omega}cm$), high carrier concentration ($6.4{\times}10^{20}cm^{-3}$), and mobility ($10.3cm^2V^{-1}s^{-1}$). By the studies we found that IGZO transparent thin film can be used as optoelectronic material and introduced application possibility for future electronic devices.

• Korean Journal of Materials Research
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• 제27권12호
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• pp.695-698
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• 2017

ZnMgBeGaO/Ag/ZnMgBeGaO multilayer structures were sputter grown and characterized in detail. Results indicated that the electrical properties of the ZnMgBeGaO films were significantly improved by inserting an Ag layer with proper thickness (~ 10 nm). Structures with thicker Ag films showed much lower optical transmission, although the electrical conductivity was further improved. It was also observed that the electrical properties of the multilayer structure were sizably improved by annealing in vacuum (~35 % at $300^{\circ}C$). The optimum ZnMgBeGaO(20nm)/Ag(10nm)/ZnMgBeGaO(20nm) structure exhibited an electrical resistivity of ${\sim}2.6{\times}10^{-5}{\Omega}cm$ (after annealing), energy bandgap of ~3.75 eV, and optical transmittance of 65 % ~ 95 % over the visible wavelength range, representing a significant improvement in characteristics versus previously reported transparent conductive materials.

• Proceedings of the Optical Society of Korea Conference
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.159-160
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 한국광학회 2005년도 하계학술발표회
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• pp.292-293
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• 2005

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.434-435
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• 2005

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current and working gas pressure. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제18권8호
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• pp.772-778
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• 2005

In this paper, we designed the cylindrical type light source that had a electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the principle of transformer, electrically equivalent circuit of cylindrical type light source was analyzed. According to the parameters of electromagnetic induction which were diameter of coil with $0.3\~1.2\;mm{\Phi}$, number of turns with $4\~12$ turns, distance with $40\~120$ mm and RF power with $10\~150$ W, the electrical and optical properties were measured. When diameter of coil was $0.3\;mm{\Phi}$, number of turns was 8 turns and distance was 40 mm, the highest brightness of 29,730 $cd/m^2$ was shown with RF power 150 W. The relationship between electromagnetic induction and plasma discharges was shown by mode transition from E-mode to H-mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.81-86
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• 2006

In this paper, we designed the cylindrical type light source that had a electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the principle of transformer, electrically equivalent circuit of cylindrical type light source was analyzed. According to the parameters of electromagnetic induction which were diameter of coil with 0.3~1.2 mm, number of turns with 4~12 turns, distance with 40~120 mm and RF power with 10~150 W, the electrical and optical properties were measured. When diameter of coil was 0.3 mm, number of turns was 8 turns and distance was 40 mm, the highest brightness of 29,730 $cd/m^2$ was shown with RF power 150 W. The relationship between electromagnetic induction and plasma discharges was shown by mode transition from E-mode to H-mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.261-262
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• 2007

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO(GZO) films. GZO target have been deposited on corning 7059 glass substrates by DC sputtering. GZO films were annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. Experimental resulted in as-grown film shows the resistivity of $6{\times}10^{-1}\;{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}\;{\Omega}{\cdot}cm$ and 90%, respectively.