Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural, Optical, and Electrical Properties of IGZO Thin Film Sputtered with Various RF Powers

RF 파워 변화에 따른 IGZO 박막의 구조적, 광학적, 전기적 특성

  • Jin, Chang-Hyun (Electronic Engineering, Cheongju University) ;
  • Kim, Hong-Bae (Department of Semiconductor Engineering, Choungju University)
  • 진창현 (청주대학교 전자공학과) ;
  • 김홍배 (청주대학교 반도체공학과)
  • Received : 2015.09.15
  • Accepted : 2015.09.24
  • Published : 2015.10.01
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Abstract

We have studied structural, optical and electrical properties of In-Ga-doped ZnO (IGZO) thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 30, 50, 70, and 90 W respectively. All of the IGZO thin films transmittance in the visible range (400 nm ~ 800 nm) was above 83%. XRD analysis showed the IGZO thin films amorphous structure of the thin films without any peak. And also IGZO thin film have low resistivity ($1.99{\times}10^{-3}{\Omega}cm$), high carrier concentration ($6.4{\times}10^{20}cm^{-3}$), and mobility ($10.3cm^2V^{-1}s^{-1}$). By the studies we found that IGZO transparent thin film can be used as optoelectronic material and introduced application possibility for future electronic devices.

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References

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