Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of annealing on the structural, electrical and optical characteristics of Ga-doped ZnO(GZO)films

Ga doped ZnO 박막의 열처리 조건에 따른 전기적 특성에 관한 연구

  • Oh, Su-Young (School of Information and communication engineering, Sungkyunkwan University) ;
  • Kim, Eung-Kwon (School of Information and communication engineering, Sungkyunkwan University) ;
  • Lee, Tae-Yong (School of Information and communication engineering, Sungkyunkwan University) ;
  • Kang, Hyun-Il (School of Information and communication engineering, Sungkyunkwan University) ;
  • Kim, Dong-Hwan (School of Information and communication engineering, Sungkyunkwan University) ;
  • Song, Joon-Tae (School of Information and communication engineering, Sungkyunkwan University)
  • 오수영 (성균관대학교 정보통신공학과) ;
  • 김응권 (성균관대학교 정보통신공학과) ;
  • 이태용 (성균관대학교 정보통신공학과) ;
  • 강현일 (성균관대학교 정보통신공학과) ;
  • 김동환 (성균관대학교 정보통신공학과) ;
  • 송준태 (성균관대학교 정보통신공학과)
  • Published : 2007.06.21
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Abstract

In this study we present the effect of annealing temperatures on the structural, electrical and optical characteristics of Ga-doped ZnO(GZO) films. GZO target have been deposited on corning 7059 glass substrates by DC sputtering. GZO films were annealed at temperatures of 400, 500, $600^{\circ}C$ in air ambient for 20 min. Experimental resulted in as-grown film shows the resistivity of $6{\times}10^{-1}\;{\Omega}{\cdot}cm$ and transmittance under 85%, whereas the electrical and optical properties of film annealed at $500^{\circ}C$ are enhanced up to $1.9{\times}10^{-3}\;{\Omega}{\cdot}cm$ and 90%, respectively.

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