• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.18-21
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• 1996

SiO 7f the SiO/TiN film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it\`s relatively low specific resistance. In this study we investigated it\`s electrical and optical characteristics to determine refractive index, absorption coefficient and Permittivity. The films are differently fabricated in thickness method for this experiment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.681-687
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• 2000

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04a
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• pp.79-82
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• 2002

Induction heating is widely used in today's industry, in operations such as metal hardening, preheating for forging operations, melting or cooking. In this paper, it was presented the magneto-thermal analysis of an induction heating jar(IH-JAR) with the material value of the stainless and the aluminum for efficient design. The magnetic field intensity inside the axisymmetric shaped cooker was analyzed using three-dimensional axisymmetric finite element method(FEM) and the effectual heat source was obtained by ohmic losses from eddy currents induced in the jar. The heat was calculated using the heat source and heating equation. Also, it was represented the temperature characteristics of the IH-JAR according to time and relative permeability in stainless parts and in aluminum parts.

• Bulletin of the Korean Chemical Society
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• v.29 no.5
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• pp.998-1002
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• 2008

The gel electrolytes were prepared with sulfuric acid and phosphoric acid, where hydrophilic fumed silica was used as a gelling agent. The influences of gel electrolyte on performance of the valve regulated lead acid (VRLA) batteries were investigated employing capacity tests, electrochemical impedance spectroscopy and scanning electron microscopy. The initial capacities of the sulfuric gel VRLA batteries were higher than that of phosphoric gel VRLA batteries. The sulfuric gel VRLA battery using 1.210 specific gravity of sulfuric acid with hydrophilic fumed silica exhibited the highest capacity of 0.828Ah. In the impedance measurements, the ohmic and charge transfer resistances for the phosphoric gel VRLA batteries were higher thanthat of sulfuric gel batteries. The morphology of electrodes of phosphoric gel VRLA batteries were more deteriorated in the SEM image.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.460-460
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• 2013

본 연구는 Si (111) 기판위에 Ga 분자선량을 변화시켜 GaN 박막을 molecular beam epitaxy 법으로 성장하고, Schottky 장벽 다이오드를 제작한 후에 deep level transient spectroscopy (DLTS) 법을 통하여 깊은 준위 결함에 대하여 조사하였다. 성장 시 Ga 분자선량은, 그리고 Torr로 달리하여 V/III 비율을 변화시켰고, Schottky 장벽 다이오드 제작을 위하여 e-beam evaporator를 사용하여 metal을 증착하였다. Schottky 접촉에는 Ni (20 nm)/Au (100 nm)를 증착하였고, ohmic 접촉에는 Ti (20 nm)/Au (100 nm)를 증착하고 I-V, C-V 그리고 DLTS를 측정하였다. DLTS 신호를 통해 GaN 박막 성장 과정에서 형성되는 깊은 결함의 종류를 확인하였으며, 열처리 등의 처리 및 측정 조건변화에 따른 결함의 거동과 종류 및 원인에 대하여 분석 설명하였다.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.37-42
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• 1997

The DC current variation of calcia doped zirconia single crystal was measured under various oxygen containing gases at high temperatures. The DC current was influenced by the gas species for oxygen activity establishment. Also, strong non-ohmic characteristics were observed in the $CO/CO_2/N_2$ gas mixtures. Based on the experimental data obtained by introducing the non-buffering gas $N_2$ into the $CO/CO_2$ mixtures, the processes occurring at the gas/solid interface during a defect relaxation process are discussed.

• Transactions of the Korean hydrogen and new energy society
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• v.29 no.3
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• pp.267-273
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• 2018

From the experiments of various temperature and gas compositions, total resistance which is composed of ohmic resistance, anode resistance, cathode resistance and Nernst loss was calculated wit simple assumption. In this work, the anode and the cathode resistance was modelled with new equation which can account for the correlation between the operating temperature and the gas composition. The proposed model can predict the resistance with maximum error of 2.57% and employed in the simulation of molten carbonate fuel cells.

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.96-100
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• 2008

The microstructure, voltage-current, and capacitance-voltage relations ofP CCYA doped ZnO-based varistors were investigated for different amounts of $Al_2O_3$. As the $Al_2O_3$ amount increased, the average grain size (d) increased from d=4.3 to $d=5.5{\mu}m$ and the sintered density $({\rho})$ increased from ${\rho}=5.63$ to ${\rho}=5.67g/cm^3$. As the $Al_2O_3$ amount increased, the breakdown voltage $(V_B)$ increased from $V_B=633$ to $V_B=71$ V/mm and the non-ohmic coefficient $({\alpha})$ increased from ${\alpha}=47$ to ${\alpha}=4$. $Al_2O_3$ served as a donor due to the donor density $(N_d)$, which increases in the range of $N_d=0.77-1.85{\times}10^{18}/cm^3$ with increasing amount of $Al_2O_3$.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.170-172
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• 2005

Internal battery ohmic measurements have been a hot topic amongst battery users and battery manufacturers. As a battery deteriorates and loses its capacity, the internal resistance of the battery increases. Everyone seems to agree that measuring the internal parameters of a cell can be very useful in determining a battery's state of health. In this paper experiences show that if a cell's resistance increases by more than25% above its baseline value(known good resistance of new 100% capacity cell), the cell will no loger be able to deliver 80% or more of the rated capacity.