Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

Magnetic Characteristics of an InSb Hall Device of Multilayerd Structure

다충구조 InSb 홀소자의 제작과 특성

  • 이우선 (조선대학교 전기제어계측공학부) ;
  • 김상용 (아남반도체) ;
  • 서용진 (대불대학교 전기전자공학부) ;
  • 박진성 (조선대학교 금속재료공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2000.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

Magnetic Characteristics of an InSb hall device of multilayered structures were investigated. For the measurement of electrical properties of the hall device InSb thin films fabricated with series and parallel multilayers wee evaporated. Hall coefficient hall mobility carrier density and hall voltage were measured as a function of the intensity of magnetic field. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$ 60 minutes. Resistance of ohmic contact was increased linearly due to increasing current. Hall voltages at 0.01 T showed 5$\times$10$^{-4}$ [V] and $1.5\times$10$^{-3}$ [V]. Some of device fabrication technique and analysis of magnetic characteristics were discussed.

Keywords