Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Permittivity Characteristics of SiO/TiN Thin Film

SiO/TiN 박막의 유전율 특성에 관한 연구

  • 김병인 (송원전문대학 전기과) ;
  • 이우선 (조선대 공과대학 전기공학과) ;
  • 김창석 (조선대 공과대학 전기공학과)
  • Published : 1996.11.01
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Abstract

SiO 7f the SiO/TiN film is used as the insulating layer and TiN film is chosen as the barrier against the diffusion of Al which is the terminal connected by ohmic contact because TiN has the advantageous properties such as good thermal stability and very low diffusion rate in spite of it\`s relatively low specific resistance. In this study we investigated it\`s electrical and optical characteristics to determine refractive index, absorption coefficient and Permittivity. The films are differently fabricated in thickness method for this experiment.

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