Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of Oxide-Nitride-Oxide Superthin Films for Nonvolatile Semiconductor Memory Devices

비휘발성 반도체 기억소자를 위한 Oxide-Nitride-Oxide 초박막의 특성

  • 김선주 (광운대학교 전자재료공학과) ;
  • 국삼경 (광운대학교 전자재료공학과) ;
  • 이상은 (광운대학교 전자재료공학과) ;
  • 이상배 (광운대학교 전자재료공학과) ;
  • 서광열 (광운대학교 전자재료공학과)
  • Published : 1996.11.01
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Abstract

Superthin ONO ( oxide -nitride - oxide ) structures were fabricated for the MONOS nonvolatile memory device with a 20$\AA$ tunneling oxide, 40$\AA$ nitride and 40$\AA$ blocking oxide. The compositions of each layer in a superthin ONO structure were investigated. Also, the characteristics of trap related to the memory quality were examined.

Keywords