• Journal of IKEEE
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• v.28 no.1
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• pp.104-109
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• 2024

In this research, we explored the influence of post-annealing atmospheres on the electrical properties of Ga₂O₃/SiC heterojunction diodes. We fabricated Ga₂O₃/SiC heterojunction diodes by RF sputtering and after the fabrication the post-annealing in various gas atmospheres was performed. We measured the changes in deep-level defects using Deep Level Transient Spectroscopy (DLTS) and we conducted an electrical characteristic of J-V measurement and Hall measurement to analyzed the effects of annealing atmosphere on Ga₂O₃/SiC heterojunction diode. In the N₂ annealed devices, the highest on-state current was measured as 3.06 × 10^-2 A/cm^2, and an increase in carrier concentration of 3.8 × 10¹⁴ cm^-3 was observed. This confirms that the variations in deep level defects due to the post-annealing atmosphere can influence the electrical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.6
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• pp.263-270
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• 2001

The mechanical and electrical properties of the hot-pressed and annealed ${\beta}-SiC-TiB_2$,/TEX> electroconductive ceramic composites were investigated as function as functions of the liquid forming additives of $Al_2O_3+Y_2O_3$. The result of phase analysis of composites by XRD revealed ${\alpha}$-SiC(6H), $TiB_2$,/TEX>, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density and the mechanical properties of composites were increased with increasing $Al_2O_3+Y_2O_3$ contents in pressureless annealing method because YAG of reaction between $Al_2O_3$ was increased. The flexural strength showed the highest value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives in pressed annealing method at room temperature. Owing to crack deflection, crack bridging, phase transition and YAG of fracture toughness mechanism, the fracture toughness showed 7.1 MPa ${\cdot}\;m^{1/2}$ for composites added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature. The electrical resistivity and the resistance temperature coefficient showed the lowest value of $6.0{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm(25\'^{\circ}C}$ and $3.0{\times}10^{-3}/^{\circ}C$ for composite added with 12 wt% $Al_2O_3+Y_2O_3$ additives in pressureless annealing method at room temperature, respectively. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature ranges from 25 $^{\circ}C$ to 700 $^{\circ}C$.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1679-1681
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• 1996

ZnO varistor with composition of 89wt%-ZnO, 3.0wt%-$Bi_{2}O_{3}$, 3.6wt%-$Sb_{2}O_{3}$, 1.16wt%-CoO, 0.88wt%-NiO, 0.71wt%-$MnO_2$, 0.93wt%-$Cr_{2}O_{3}$, 0.013wt%-$Al_{2}O_{3}$ was fabricated by sintering methods. The effects of annealing on the J-E characteristics of ZnO varistors were investigated. These changes of electric properties were found to be caused by the variation of grains and grain boundary related to annealing. And the conductive mechanism and micostructure of ZnO varistor were researched using I-V meter, SEM and XRD.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1108-1114
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• 1998

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.333-336
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• 1999

The relationship between the DC degradation characteristics of the $ZnO-Bi_2O_3$ varistor and post-annealing is investigated in this study. $ZnO-Bi_2O_3$ varistors containing $SiO_2$ range 0.3 mol% were fabricated by standard ceramic techniques. The post- annealing is performed at $550^{\circ}C$ for 0, 1.5 and 5h. A little phase transition is found according to the analysis of X-ray diffraction. DC degradation tests were conducted at $115\pm3^{\circ}C$ for periods up to 22h. Current-voltage analysis was used to determine nonlinear coefficients($\alpha$). Capacitance-voltage analysis enable the donor density($N_d$) and the barrier height($E_B$) to be determined. From above analysis, it is found that the past-annealing for 5h improved degradation characteristics in $ZnO-Bi_2O_3$ with Si additive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.589-592
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• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.801-805
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• 2003

To explore the annealing temperature dependence of dielectric properties $Ta_2$$O_{5}$ thin films were prepared by MOCVD(metal-organic chemical vapor deposition) and MOD(metal-organic decomposition). The $Ta_2$$O_{5}$thin films fabricated MOCVD and MOD were annealed in $O_2$at temperature between 600 and 90$0^{\circ}C$. The measured dielectric constant of both films at 100 KHz was the highest value at $650^{\circ}C$ and decreased with increasing annealing temperature above $650^{\circ}C$. Plane-view SEM image showed that the boundary seems to be crack broke out with increasing annealing temperature. It was confirmed that outbreak of boundary influenced a decrease of dielectric constant with increasing annealing temperature. The leakage current density increased with increasing annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.10
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• pp.648-652
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• 2014

We have investigated the effect of electrical properties of amorphous InGaZnO thin film transistors (a-IGZO TFTs) by post thermal annealing in $O_2$ ambient. The post-annealed in $O_2$ ambient a-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has better performance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well as reasonable threshold voltage, than others do. The interface trap density is controlled to achieve the optimum value of TFT transfer and output characteristics. The device performance is significantly affected by adjusting the annealing condition. This effect is closely related with the modulation annealing method by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.