Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Structural and electrical Properties of $BaTiO_3$ Thin Films Deposited on Si/MgO Substrates

Si/MgO 기판에 증착된 BaTiO$_3$ 박막의 구조 및 전기적 특성

  • 홍경진 (전남대학교 공업기술 연구소) ;
  • 김태성 (전남대학교 전기공학과)
  • Published : 1998.12.01
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Abstract

$BaTiO_3$ thin films preferred c-axis orientation for the potential application of ferroelectric memory devices were deposited on silicon substrates(100) by RF sputtering and annealed at 800 and 900[$^{\circ}C$] in air. The BT(100)/BT(110) peak ratio of the sputtered sample was decreased with post-annealing in air. According to increasing with annealing temperature and time, the peak ratio of BT(100)/BT(110) was decreased and the surface density of thin film was high. Dielectric characteristics of $BaTiO_3$ thin film was measured as a function of annealing temperature and frequency. The dielectric constants were increased with annealing and decreased with frequency by space charge polarization and dipole polarization below 600[kHz]. The remanent polarization and coercive field in P-E hysteresis loop of $BaTiO_3$thin film were increased with the annealing temperature in air. The remanent polarization and coercive filed annealed at 800[$^{\circ}C$] for 1hr were 1.2[$\mu$C/$cm^2$] and 200[kV/cm]

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References

  1. J. Appl. Phys. v.78 no.9 Structural characterization of epitaxial BaTiO₃thin films grown by sputter deposition on MgO(100) Kim. S. S;Shunichi Hishita
  2. J. Appl. Phys. v.36 $Ba_{0.3}Sr_{0.7}TiO_{3}$Thin Film Production on Atomically Flat SrTiO₃(100) Substrates by a Pulsed Laser Deposition and Dielectric Properties Mitsuru Nakano(et al.)
  3. J. Appl. Phys. v.81 no.5 Structural and dielectric properties of epitaxial $SrTiO_3$ films grown on Si(100) substrate with TiN buffer layer M.B.Lee;H. Koinuma
  4. J. Aappl. Phys. v.36 Electrical properties of Sol-Gel Deposited BaTiO₃Thin films on Si(100) Substrates Cho R. C.
  5. J. Apply.l Phys. v.33 Interaction of PbTiO₃films with Si Substrate Yushi. Shichi(et al.)
  6. J. Appl. Phys. v.36 Influence of Buffer Layers and Barrier Metals on Properties of (Ba, Sr)TiO₃Films prepared by Liquid Source Chemical Vapor Deposition Takaaki Kawahara
  7. J. Appl. Phys. v.33 Unform Ultra-Thin Pb(Zr,Ti)O₃Films Formed by Metal- Organic Chemical Vapor Deposition and Their Electrical Characteristics Hiroshi Mik;Yuzuru Ohji
  8. J. appl. Phys. v.33 Dielectric Properties of(111) and (100) Lead-Zirconate-Titanate Films Prepared by Sol-Gel Technique Katsuhino Aoki(et al.)
  9. J. Appl. Phys. v.33 Crystall Graphic and Electrical Properties of Epitaxial BaTiO₃ Film Grown on Conductive and Insulating Perovskite Oxides Yukio Watanabe(et al.)