• 대한금속재료학회지
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• 제48권11호
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• pp.1041-1046
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• 2010

The reactions between a Sn-3.0Ag-0.5Cu solder alloy and electroless Ni/electroless Pd/immersion Au (ENEPIG) surface finishes with various Pd layer thicknesses (0, 0.05, 0.1, 0.2, $0.4{\mu}m$) were examined for the effect of the Pd layer on the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow at $235^{\circ}C$. The thin layer deposition of an electroless Pd (EP) between the electroless Ni ($7{\mu}m$) and immersion Au ($0.06{\mu}m$) plating on the Cu substrate significantly retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer during reflow. Its retarding effect increased with an increasing EP layer thickness. When the EP layer was thin (${\leq}0.1{\mu}m$), the retardation of the massive spalling was attributed to a reduced growth rate of the $(Cu,Ni)_6Sn_5$ layer and thus to a lowered consumption rate of Cu in the bulk solder during reflow. However, when the EP layer was thick (${\geq}0.2{\mu}m$), the initially dissolved Pd atoms in the molten solder resettled as $(Pd,Ni)Sn_4$ precipitates near the solder/$(Cu,Ni)_6Sn_5$ interface with an increasing reflow time. Since the Pd resettlement requires a continuous Ni supply across the $(Cu,Ni)_6Sn_5$ layer from the Ni(P) substrate, it suppressed the formation of $(Ni,Cu)_3Sn_4$ at the $(Cu,Ni)_6Sn_5/Ni(P)$ interface and retarded the massive spalling of the $(Cu,Ni)_6Sn_5$ layer.

• 한국산학기술학회논문지
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• 제7권3호
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• pp.332-337
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• 2006

기판전면에 패턴 없이 15 nm Co/15 nm Ni/70 nm polysilicon/200 nm $SiO_2$/Si(100) 구조로 적층된 구조로부터 급속열처리기 (rapid thermal annealer : RTA)를 이용하여 40초간 700, 900, $1000^{\circ}C$의 실리사이드화 온도를 변화시키면서 CoNi 복합실리사이드를 형성하였다. 완성된 두께 100 nm 정도의 CoNi 복합실리사이드층으로 배선층을 만든다고 상정하여, 이중 집속이온빔(dual beam focused ion beam : FIB)을 써서 30 kV에서 표면전류를 $1{\sim}100$ pA 범위에서 조절하면서 나노급 선폭제작의 가능성을 확인하였다. 각 온도별 복합실리사이드에 동일한 이온빔 조건으로 $100{\mu}m$ 길이의 패턴을 만들고, 이온빔으로 양 끝단에 트렌치를 만들어 FE-SEM으로 각 조건에서의 선폭, 두께, 최종 에칭형상을 확인하였다. 기존 형상변형이 많아서 나노급 선폭 구현이 불리한 폴리사이드 공정에 비해서, 최초로 새로운 저저항 복합실리사이드에 대해서 100 nm 이하의 나노급 피치를 가진 선폭 제작이 $30kV{\sim}30pA$ 범위에서 가능하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.157-157
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• 2008

As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.

• Nuclear Engineering and Technology
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• 제48권3호
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• pp.773-777
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• 2016

A betavoltaic battery was prepared using radioactive $^{63}Ni$ attached to a three-dimensional single trenched P-N absorber. The optimum thickness of a $^{63}Ni$ layer was determined to be approximately $2{\mu}m$, considering the minimum self-shielding effect of beta particles. Electroplating of radioactive $^{63}Ni$ on a nickel (Ni) foil was carried out at a current density of $20mA/cm^2$. The difference of the short-circuit currents ($I_{sc}$) between the pre- and post-deposition of $^{63}Ni$ (16.65 MBq) on the P-N junction was 5.03 nA, as obtained from the I-V characteristics. An improved design with a sandwich structure was provided for enhancing performance.

• Journal of Welding and Joining
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• 제35권3호
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• pp.1-6
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• 2017

The effect of metal turnover (MTO) of electroless Ni plating bath on the brittle fracture behavior of electroless nickel electroless palladium immersion gold (ENEPIG)/Sn-3.0wt%Ag-0.5wt%Cu(SAC305) solder joint was evaluated in this study. The MTOs of the electroless Ni for the ENEPIG surface finish were 0 and 3. As the MTO increased, the interfacial IMC thickness increased. The brittle fracture behavior of the ENEPIG/SAC305 solder joint was evaluated with high speed shear (HSS) test. The HSS strength decreased with increasing the MTO of the electroless Ni bath. The brittle fracture increased with increasing the shear speed of the HSS test. The percentage of the brittle fracture for the 3 MTO sample was much higher than that for the 0 MTO sample.

• Journal of Electrochemical Science and Technology
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• 제11권2호
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• pp.155-164
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• 2020

Here we report our preliminary results about nickel phosphide (Ni-P) electroless coating on the surface of cellulose paper (CP) and its feasibility as the anode for lithium (Li) batteries. In particular, CP can act as a flexible skeleton to maintain the mechanical structure, and the Ni-P film can play the roles of both the anode substrate and the active material in Li batteries. Ni-P films with different P contents were plated uniformly and compactly on the microfiber strands of CP. When they were tested as the anode for Li battery, their theoretical capacity per physical area was comparable to or higher than hypothetical pure graphite and P film electrodes having the same thickness. After the large irreversible capacity loss in the first charge/discharge process, the samples showed relatively reversible charge/discharge characteristics. All samples showed no separation of the plating layer and no detectable micro-cracks after cycling. When the charge cut-off voltage was adjusted, their capacity retention could be improved significantly. The electrochemical result was just about the same before and after mechanical bending with respect to the overall shape of voltage curve and capacity.

• 대한방사선기술학회지:방사선기술과학
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• 제38권4호
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• pp.347-353
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• 2015

디지털 흉부단층합성법 검사에서 부가필터 사용에 따른 환자의 선량과 화질의 특성을 비교해보고자 하였다. 부가필터의 종류는 구리, 알루미늄, 니켈을 사용하였으며, 이 때 각 각의 부가필터에 따른 유효선량, 면적선량을 측정해 보았고, 화질의 물리적 평가방법으로 signal to noise ratio (SNR)과 contrast to noise ratio (CNR)을, 시각적 평가방법으로 contrast detail (CD) phantom을 이용한 CD 곡선을 비교하였다. 그 결과 부가필터별 조사선량이 비슷한 두께는 0.3 mmCu, 3 mmAl, 0.3 mmNi 였으며 부가필터를 사용하지 않았을 때 보다 조사선량 값이 평균 33.1% 감소하였다. 각 필터 별 dose area product (DAP) 선량값을 측정한 결과 Ni를 사용하였을 때 선량이 72.9% 감소하여 가장 낮았으며, 필터별 DAP 값은 통계적으로 유의한 차이를 보였다(p<0.01). 유효선량은 Ni를 사용하였을 때 가장 낮은 선량 값을 보였고, 필터를 사용하지 않았을 때 0.102 mSv에 비해 48.0% 감소하였다. CD phantom에 의한 시각적 화질평가에서는 각 필터별로 비슷한 양상을 나타냈으며, 3가지 부가필터를 사용 하였을 때 S NR과 CNR은 평균 19.07, 1 8.17% 감소함을 보였다. 결론적으로 디지털 흉부 단층합성법 검사에서 부가필터로 Ni을 사용할 경우 유효선량 및 DAP 선량 감소, 화질에서 가장 적절함을 알 수 있었다.

• 한국진공학회지
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• 제16권5호
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• pp.311-321
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• 2007

NiO 극초박막을 Ag(001) 단결정 위에 성장하는 과정에서 발생하는 화학 결함들을 X선 광전자 분광법을 이용하여 연구하였다. 특히 박막 두께, 산소 분압, 물 분압, 기판 온도 등을 잘 제어한 성장 환경에서 얻어진 O 1s, Ni 2p 스펙트라의 분석을 통하여 NiO 극초박막 성장 시 형성되는 화학 결함들의 정체를 일관성 있게 밝혀내었다. 이를 통하여 결함 밀도를 최소화 할 수 있는 최적의 성장 조건을 제안할 수 있게 되었다.

• 한국자기학회지
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• 제10권5호
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• pp.196-202
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• 2000

FeMn에 의해 교환 바이어스된 Synthetic antiferromagnet(CoFe/Ru/CoFe)을 가진 Top Ta/NiFe/CoFe/Cu/CoFe/Ru/CoFe/FeMm/Ta 스핀밸브 구조를 마그네트론 스퍼터링 법으로 제조하여 유효 교환이방성 및 자기저항 특성을 조사하였다. FeMn 반강자성층의 두께가 100$\AA$정도일 때 자기저항비와 유효 교환바이어스 자장이 최대값을 나타내었으며, 100 $\AA$ 이상 두께 증가시 FeMn층을 통한 션팅 전류에 의한 자기저항 효율의 저하로 자기저항이 점점 감소하였다. 자유층의 두께가 40 $\AA$일 때 7.5% 이상의 최대 자기저항비가 얻어졌으며, 자유층의 두께 감소에 따라 자기저항비는 감소하였다. Synthetic antiferrormagnet 구조에서 Cu층에 인접한 CoFe(Pl)층의 두께를 증가시키고 FeMn층에 인접한 CoFe(P2)층의 두께를 감소시켜 그 두께 차이가 증가할수록 자기저항비는 증가하였고 반면 유효 교환 바이어스 자장은 감소하였다. 자기저항특성의 증가는 Pl층 두께 증가로 인한 스핀의존산란 효율의 증가로 이해되었으며, 유효 교환 바이어스 자장의 감소는 최소에너지 모델의 이론적 계산을 통해 감소경향을 검증할 수 있었다.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.