Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Characterization of Lateral NiO/Ga2O3 FETs with Heterojunction Gate Structure

이종접합 Gate 구조를 갖는 수평형 NiO/Ga2O3 FET의 전기적 특성 연구

  • Geon-Hee Lee (Department of Electric Materials Engineering, Kwangwoon University) ;
  • Soo-Young Moon (Department of Electric Materials Engineering, Kwangwoon University) ;
  • Hyung-Jin Lee (Department of Electric Materials Engineering, Kwangwoon University) ;
  • Myeong-Cheol Shin (Department of Electric Materials Engineering, Kwangwoon University) ;
  • Ye-Jin Kim (Department of Electric Materials Engineering, Kwangwoon University) ;
  • Ga-Yeon Jeon (Department of Electric Materials Engineering, Kwangwoon University) ;
  • Jong-Min Oh (Department of Electric Materials Engineering, Kwangwoon University) ;
  • Weon-Ho Shin (Department of Electric Materials Engineering, Kwangwoon University) ;
  • Min-Kyung Kim (Department of Electric Materials Engineering, Kwangwoon University) ;
  • Cheol-Hwan Park (Department of Chemical Engineering, Kwangwoon University) ;
  • Sang-Mo Koo (Department of Electric Materials Engineering, Kwangwoon University)
  • 이건희 (광운대학교 전자재료공학과) ;
  • 문수영 (광운대학교 전자재료공학과) ;
  • 이형진 (광운대학교 전자재료공학과) ;
  • 신명철 (광운대학교 전자재료공학과) ;
  • 김예진 (광운대학교 전자재료공학과) ;
  • 전가연 (광운대학교 전자재료공학과) ;
  • 오종민 (광운대학교 전자재료공학과) ;
  • 신원호 (광운대학교 전자재료공학과) ;
  • 김민경 (광운대학교 전자재료공학과) ;
  • 박철환 (광운대학교 화학공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2023.05.04
  • Accepted : 2023.05.30
  • Published : 2023.07.01
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Abstract

Gallium Oxide (Ga2O3) is preferred as a material for next generation power semiconductors. The Ga2O3 should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga2O3 is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu2O. Research the lateral-type FET structure of NiO/Ga2O3 heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×1017 to 1×1019 cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at ID = 1×10-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga2O3 region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at ID =1×10-3 A/mm.

Keywords

Acknowledgement

This work was supported by the Technology Innovation Program Development of nextgeneration power semiconductor based on Si-onSiC structure (RS-2022-00154720), 1.2 kV low-loss gallium oxide transistor (RS-2022-00144027) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea), and the present research has been conducted by the excellent researcher support project of Kwangwoon University in 2022.

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