• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.81-89
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• 2022

The in-situ electromigration(EM) and annealing test were performed at 110, 130, and 150℃ with a current density of 1.3×10⁵ A/cm² conditions to investigate the effect of non-conductive film (NCF) on growth kinetics of intermetallic compound (IMC) in Cu/Ni/Sn-2.5Ag microbump. As a result, the activation energy of the Ni₃Sn₄ IMC growth in the annealing and EM conditions according to the NCF application was about 0.52 eV, and there was no significant difference. This is because the growth rate of Ni-Sn IMC is much slower than that of Cu-Sn IMC, and the growth behavior of Ni-Sn IMC increases linearly with the square root of time, so it has the same reaction mechanism dominated by diffusion. In addition, there is no difference in the activation energy of the Ni₃Sn₄ IMC growth because the EM resistance effect of the back stress according to the NCF application is not large.

• Journal of the Korean Magnetics Society
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• v.21 no.4
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• pp.132-135
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• 2011

The exchange bias field ($H_{EX}$) and the coercivity ($H_C$) variation and change depending on the thickness of intermediately super-soft magnetic NiFeCuMo layer with different thickness of the bottom NiFe layer were investigated. The $H_{EX}$ of triple pinned NiFe(4 nm)/NiFeCuMo($t_{NiFeCuMo}$= 1 nm)/NiFe(4 nm)/FeMn multilayer has the maximum value more less than one of single pinned NiFe(8 nm)/FeMn layer. If NiFeCuMo layer is inserted each into between the pinned and free NiFe layers, we can be used as GMR-SV device for a bio-sensor that has improved magnetic sensitivity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.83-83
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.259-259
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• 2015

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was deposited before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. This Ni diffusion through an ITO NW was investigated by transmission electron microscope to observe the Ni-tip sitting on a single crystalline ITO NW. Meanwhile, a single crystalline ITO structure was found at bottom and body part of a single ITO NW without remaining of Ni atoms. This indicates the Ni atoms diffuse through the oxygen vacancies of ITO structure. Rapid thermal process (RTP) applied to generate an initial stage of a formation of Ni nanoparticles with variation in time periods to demonstrate the existence of an optimum condition to initiate ITO NW growth. Modulation in ITO sputtering condition was applied to verify the ITO NW growth or the ITO film growth. The Ni-assisted grown ITO layer has an improved electrical conductivity while maintaining a similar transmittance value to that of a single ITO layer. Electrically conductive and optically transparent nanowire-coated surface morphology would provide a great opportunity for various photoelectric devices.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.121-125
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• 2004

Nickel oxide (NiO) thin films were deposited on Si(100) substrates at room temperature by RF magnetron sputtering from a NiO target. The effects of plasma gas and RF power on the crystallographic orientation and surface morphology of the NiO films were investigated. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) were employed to characterize the deposited film. It was found that the type of plasma gases affected the crystallographic orientation, deposition rate, surface morphology, and crystallinity of NiO films. Highly crystalline NiO films with (100) orientation were obtained when it was deposited under Ar atmosphere. On the other hand, (l11)-oriented NiO films with poor crystallinity were deposited in $O_2$. Also, the increase in RF power resulted in not only higher deposition rate, larger grain size, and rougher surface but also higher crystallinity of NiO films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.40-43
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• 2018

Various Ni-doped carbon (C : Ni) thin films were fabricated using different Ni target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the structural, physical, surface, and electrical properties of C : Ni films were investigated. The UBM C : Ni thin films exhibited uniformly smooth surfaces. The rms surface roughness and friction coefficient values of the C : Ni films decreased with the increase in target power density. The physical properties of the films such as hardness and elastic moduli increased while their electrical properties such as resistivity decreased with the increase in the target power density. These results show that an increase of the power density leads to an increase in the proportion of Ni and nanocrystallization of the amorphous carbon film; this contributes to the changes observed in the physical and electrical characteristics.

• Journal of the Korean Electrochemical Society
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• v.14 no.3
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• pp.163-170
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• 2011

Nanocrystalline Ni thin films were electodeposited from chloride baths to investigate the influences of additive concentration, current density and solution pH on residual (or internal) stress, surface morphology, and microstructure of the films. It was observed that residual stress in Ni thin film was changed from tensile stress mode (about 150 MPa) to compressive stress mode (about -100 MPa) with increasing saccharin concentration as an additive. Microstructure of Ni thin films was changed with/without saccharin in baths. Ni thin films electrodeposited from saccharinfree bath mainly consisted of both FCC(111) and FCC(200) phases. However, Ni thin film electrodeposited from the baths containing saccharin exhibited FCC(111), FCC(200) and FCC (311) phases [sometimes, FCC (220)]. Current density influenced residual stress of Ni thin films. It was measured to be the lowest compressive stress value (about-100 MPa) in range of current density of $2.5\sim10mA{\cdot}cm^{-2}$. Solution pH also influenced residual stress of Ni thin film. Addition of saccharin in baths affected grain size of Ni thin films. Grain sizes of Ni thin films were measured to be about 60 nm without saccharin and 24~38 nm with more than 0.0005M saccharin concentration. Surface of Ni thin films was changed from nodular to smooth surface morphology with addition of saccharin.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Journal of the Korean institute of surface engineering
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• v.50 no.1
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• pp.29-34
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• 2017

Chloride plating solution was fabricated by dissolving metal Ni powders in a mixed solution with HCl and de-ionized water. Effects of $Ni^{2+}$ and saccharin concentrations in the plating baths on current efficiency, residual stress, surface morphology and microstructure of Ni films were studied. In the case of $0.2M\;Ni^{2+}$ concentration, current efficiency was decreased to about 65 % with increasing saccharin concentration, but, in the case of $0.7M\;Ni^{2+}$ concentration, it was shown more than 90 % with the increase of saccharin concentration. Residual stress of Ni thin film was appeared to be about 400 MPa up to 0.0244 M saccharin concentration at the $0.2M\;Ni^{2+}$ concentration and surface morphology with severe cracks was observed in the range of 0.0487~0.0975 M saccharin concentration. Residual stress of Ni thin films was measured to be about 750 MPa without saccharin addition and 114~148 MPa at the range of 0.0097~0.0975 M saccharin concentration for the $0.7M\;Ni^{2+}$ concentration. Relatively low residual stress values (114~148 MPa) of the Ni films at the range of 0.0097~0.0975 M saccharin concentration may be resulted from codeposition of S from saccharin. Ni films at $0.7M\;Ni^{2+}$ concentration showed smooth surface morphology and were independent of saccharin concentration. Ni films at $0.7M\;Ni^{2+}$ concentration consist of FCC(111), FCC(200), FCC(220) and FCC(311) peaks and the intensities of FCC(111) and FCC(200) peaks increased with increasing saccharin concentration. Also, the average grain size decreased with increasing saccharin concentration from about 30 nm to about 15 nm.

• Bulletin of the Korean Chemical Society
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• v.32 no.8
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• pp.2571-2576
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• 2011

Surface film formation on $Li(Ni_{1/3}Co_{1/3}Mn_{1/3})O_2$ cathodes upon oxidation of electrolyte during electrochemical cycling was investigated. Information on the important factors for film formation on the cathode can facilitate the design of additives that improve the properties of the cathode. Pyrazole is added to the electrolyte because it is readily oxidized to form a surface film on the cathode. The results of differential scanning calorimetry and Fourier transform infrared spectroscopy (FTIR) showed that the active material played a dominant role in the interfacial film formation with the electrolyte. Carbon black played a negligible role in the surface film formation.