• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.315-319
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• 2014

In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage ($V_{TH}$) under illumination with/without the gate bias, and the amount of shift in $V_{TH}$ is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in $V_{TH}$ under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.154-154
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• 2013

In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권9호
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• pp.456-465
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• 2001

In this paper, breakdown voltages in $SF_6-N_2$ mixtures were experimentally investigated to understand characteristics of dielectric strength and physical phenomena in nonuniform field disturbed by a needle shape protrusion. The test voltages are the lightning impulse$(\pm1.2/44 \mus)$ and the damped oscillatory impulse$(\pm400 ns / 0.83 MHz)$ voltages which can be occurred by the operation of disconnecting switches in gas-insulated switchgears(GIS). The effects of the polarity and wave shape of the test voltages, and the gas pressure on the V-t characteristics were in detail examined. The V-t characteristic curves were measured in different two ways : (1) one is the method by taking the maximum voltage recorded at or prior to breakdown against the time to breakdown, that is, the Procedures recommended in IEC 60060-1, (2) the other is the method by taking the voltage at the instant of chopping against the time to breakdown. As a result, the V-t characteristics of $SF_6-N_2$ mixtures in nonuniform electric field were significantly affected by the polarity and wave shape of the applied voltages. The positive breakdown voltages resulted in lower breakdown voltages in the time ranges considered, and the V-t curves for the negative oscillatory impulse voltage were extended over the longer time range. For the lightning impulse voltages, the V-t curves obtained by IEC Pub. 60060-1 were nearly same with the V-t curves obtained by the voltage at the instant of chopping against the time to breakdown. It is clear that the actual breakdown voltages were much lower than the maximum voltages appearing at or prior to breakdown because of the displacement current produced as a result of the dV/dt during the oscillatory transient voltage app1ication. The scattering of the negative actual breakdown voltages was much larger than that of the positive.

• 대한전기학회논문지
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• 제35권7호
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• pp.278-284
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• 1986

Double-diffused metal oxide power semiconductor field effect transistors are used extensively in recent years in various circuit applications. The temperature variation of the drain current at a fixed bias shows both positive and negative resistance characteristics depending on the gate threshold voltage and gate-to source bias votage. In this paper, the decision method of the gate crossover voltage by the temperature variation and a new method to determine the gate threshold voltage graphecally are presented.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1673-1676
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• 2007

We have investigated the degradation mechanism of hydrogenated amorphous silicon (a- Si:H) thin film transistors (TFTs) The threshold voltage of driving a-Si:H TFT is shifted severely by electrical bias due to a charge trapping and defect state creation. And the short channel TFTs exhibit less threshold voltage degradation than long channel TFTs. We propose the pixel circuits employing negative bias annealing scheme in order to suppression of threshold voltage shift of a-Si:H TFT.

• 대한전기학회논문지
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• 제35권2호
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• pp.55-61
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• 1986

This paper describes the generation region and suppression effect of the abnormal field voltage induced when the synchronous generator is switched to the infinite bus, the critical value of negative field current is calculated by simmulation which has parameters of the phase difference and voltatge ratio between the bus and the generator. The suppression effect of discharge resistance connected in parallel with the field circuit is also investigated. According to this study, the optimal value of discharge resistance which can suppress effectively the abnormal field voltage may be calculated.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.967-970
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• 1999

A novel linear transconductor for low-voltage low-power signal processing is proposed. The transconductor consists of a pnp differential-pair and a npn differential-pair which are biased by local negative feedback. The simulation results show that the transcondcutor with transconductance of 50 $mutextrm{s}$ has a linearity error of 0.05% and the power dissipation is 2.44 ㎽ over an input linear range from -2V to +2V at supply voltage $\pm$3V.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.172-176
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• 2001

In this paper, a new detection algorithm of faulted voltages under the unbalanced condition and a control algorithm of the instantaneous voltage sag corrector (IVSC) are proposed. To quantify the unbalance under fault conditions, the voltages are decomposed into two balanced three-phase systems using the symmetrical components of positive and negative sequence voltages, which is defined by magnitude factor (MF) and unbalance factor (UF). New control algorithm based on MF and UF values for instantaneous voltage compensation are proposed and verified through the PSCAD/EMTDC simulation and experimental results.

• 전기학회논문지
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• 제64권9호
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• pp.1297-1305
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• 2015

This paper proposes a power feedforward technique for the performance improvement of DC-link voltage control in the dynamic voltage restorer (DVR). The DC-link Voltage is able to be unstable for an instant owing to any change in the load and voltage sag. The distortion of the DC-link voltage leads to the negative influence on the performance of DVR. To mitigate the distortion of the DC-link voltage, the power feedforward component is calculated by the load power and the grid voltage, and then it is added to the reference current of the conventional DC-link voltage controller. By including output power feedforward component on the DC-link controller, the DC-link voltage can settle down more quickly than when the conventional DC-link voltage controller applied. The proposed technique was validated through the simulation and experimental results.