Advanced Amorphous Silicon TFT Backplane for AMOLED Display

  • Han, Min-Koo (School of Electrical Engineering and Computer Science, Seoul National University) ;
  • Shin, Hee-Sun (School of Electrical Engineering and Computer Science, Seoul National University)
  • 발행 : 2007.08.27

초록

We have investigated the degradation mechanism of hydrogenated amorphous silicon (a- Si:H) thin film transistors (TFTs) The threshold voltage of driving a-Si:H TFT is shifted severely by electrical bias due to a charge trapping and defect state creation. And the short channel TFTs exhibit less threshold voltage degradation than long channel TFTs. We propose the pixel circuits employing negative bias annealing scheme in order to suppression of threshold voltage shift of a-Si:H TFT.

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