• 반도체디스플레이기술학회지
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• 제11권4호
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.36-37
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• 2006

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

• 한국전기전자재료학회논문지
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• 제35권3호
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• pp.269-274
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• 2022

We prepared carbon nanotube (CNT) paper by a vacuum filtration method for the use of a chip-typed resistor as a precision passive device with a constant resistance. Hybrid resistor composed of the CNT resistor with a negative temperature coefficient of resistance (T.C.R) and a metal alloy resistor with a positive T.C.R could lead to a constant resistance, because the resistance increase owing to the temperature increase at the metal alloy and decrease at the CNT could counterbalance each other. The constant resistance for the precision passive devices should be maintained even when a heat was generated by a current flow resulting in resistance change. Performance reliabilities of the CNT resistor for the precision passive device applications such as electrical load limit, environmental load limit, and life limit specified in IEC 60115-1 must be ensured. In this study, therefore, the rated power determination and T.C.R tests of the CNT paper were conducted. -900~-700 ppm/℃ of TCR, 0.1~0.2 A of the carrying current capacity, and 0.0625~0.125 W of the rated power limit were obtained from the CNT paper. Consequently, we confirmed that the application of CNT materials for the precision hybrid passive devices with a metal alloy could result in a better performance reliability with a zero tolerance.

• 한국임상수의학회지
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• 제26권5호
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• pp.419-422
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• 2009

개의 림프종을 분자유전자학적으로 진단하고자 본 연구를 수행하였다. 이를 위하여 12개의 염색 및 고정된 도말 표본으로부터 DNA를 추출한 후, 임파육종에 특이적인 재배열된 항원 수용체 유전자를 중합효소연쇄반응으로 증폭시켰다. 그 결과 6개의 type-B 림프종에서 type-B 세포의 림프종에 특이적인 IgH (immunoglobulin H) 주유전자(major gene)와 type-B 림프종의 부유전자(minor gene)가 증폭되었다. 또한, 3개의 type-T 세포의 림프종의 경우에도 이에 특이적인 $TCR{\gamma}$ 유전자가 증폭되었다. 한편, 에를리키아증에 이환된 표본은 $TCR{\gamma}$ 유전자가 위양성으로 증폭되었지만, 활성화된 림프절 샘플의 경우에는 어떤 유전자의 재배열도 관찰되지 않았다. 따라서 림프종의 진단에 있어서 혈액 또는 조직 도말 표본의 DNA를 이용하여 재배열된 항원 수용체 유전자의 검출을 시도한다면, 특이적이고 객관적으로 림프종을 감별진단 할 수 있을 것이며, 나아가 회고적 분석에도 유용하게 활용될 수 있을 것으로 사료된다.

• IMMUNE NETWORK
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• 제2권4호
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• pp.217-222
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• 2002

Background: Scid.adh is a recently developed murine thymic lymphoma cell line, which has been used as in vitro model for the study of double negative stage III thymocytes. In this study, we compared the expression profile of a number of genes and proteins, which are tightly related to T cell development and apoptosis, in thymic lymphoma cell lines, R1.1, EL-4, and Scid.adh for the developmental staging. Methods: We examined the expression of development marker genes and proteins in three lymphoma cell lines by flow cytometry and RT-PCR. In addition, the expression of apoptosis-related molecules including bcl-2, bax and Fas was also investigated. Results: As previously reported, Scid.adh cell line expressed CD8 and CD25 but not TCR ${\alpha}$ chain, while R1.1 cells expressed TCR ${\alpha}$ chain and both CD4 and CD8 transcripts. These suggest that R1.1 might be in double positive stage, and low level of CD44 expression and the absence of CD25 support this suggestion. In contrast, EL-4 cells showed high level of TCR ${\alpha}$ chain transcript, and low-level of CD4 expression, suggesting that EL-4 is in more mature stage than R1.1. Further, this suggestion was supported by the lack of mT-20 in EL-4 cells, which is expressed in the immature thymocytes, and Scid.adh and R1.1 cell lines, but not in the terminally differentiated thymocytes and peripheral T cells. Among the apoptosis-related gene, transcripts of bcl-2 gene were detected in both R1.1 and EL-4 but not in Scid.adh cells, while bax was expressed in all cell lines. Fas expression was the highest in EL-4 cells and low in Scid.adh cell line. Conclusion: R1.1 cell may represent double positive stage, and EL-4 is more differentiated cell line. In addition, Scid.adh and EL-4 cell lines are suspected to be useful for the study of function of bcl-2 family and Fas during the thymocyte development, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.411-415
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• 2002

Precision resistors were prepared by controlling the concentration of Ni and Cr deposited on cylindrical alumina substrates (diameter: 1.7mm, length: 5.5mm). Deposited films were analyzed with FESEM, AES, and AFM. As the amount of Cr in the film increases, the TCR was shifted to negative direction.

• Journal of Power Electronics
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• 제14권4호
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• pp.754-763
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• 2014

In this paper a method for the development of a static VAR compensator (SVC) control algorithm is presented. The proposed algorithm has been designed with the objective of eliminating the negative impact of electric arc furnaces on the power system. First, a mathematical model of the proposed SVC controller in the d-q synchronous rotating coordinate system is developed. An analysis under dynamic and steady state conditions is also carried out. The efficiency of the presented controller is demonstrated by means of computer simulations of an actual steel-factory network model. The major advantages of the proposed controller are better flicker compensation, increased ability to regulate voltage and the need for only one-point network measurements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.299-302
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• 2000

RTD temperature sensor is a thermoresistor which uses the liner dependence of the resistance of the sensing material on the temperature, and has good stability and sensibility, so it can be used in highly precise temperature measurement. In this study RTD sensor was fabricated using Pt thin film. The Pt thin film was deposited on alumina using DC-Sputter, and annealed with various temperature. Through the experiments of XRD, AFM, 4-point probe, the surface structure of the thin film with annealing conditions and their effects on the electrical resistance were investigated. RTD with serpentine pattern was fabricated using Lift-off and resistance-temperature characteristics were studied.

• Transactions on Electrical and Electronic Materials
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• 제18권6호
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• pp.330-333
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• 2017

$Co_xMn_{3-x}O_4$ ($1.48{\leq}x{\leq}1.63$) ceramics were fabricated using the solid-state reaction method. Structural and electrical properties of specimens based on the composition ratio of Co were observed in order to investigate their applicability in NTC thermistors. All specimens showed a single spinel phase with a homogeneous tetragonal structure. The $Co_{1.57}Mn_{1.43}O_4$ specimen showed a maximum average grain size of approximately $6.47{\mu}m$. In all specimens, TCR properties displayed excellent characteristics of over $-4.2%/^{\circ}C$. The resistivity at 298 K and B-value of the $Co_{1.57}Mn_{1.43}O_4$ specimen were approximately $418{\Omega}-cm$ and 4300, respectively.

• 센서학회지
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• 제18권2호
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• pp.147-153
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• 2009

A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.