Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of annealing temperature on the structural and electrical properties of titanium nitride film resistors

  • Cuong, Nguyen Duy (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Dong-Jin (KMC technology) ;
  • Kang, Byoung-Don (Department of Materials Science and Engineering, Chungnam National University) ;
  • Kim, Chang-Soo (Korea Research Institute of Standards and Science) ;
  • Yoon, Soon-Gil (Department of Materials Science and Engineering, Chungnam National University)
  • Published : 2006.06.22
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Abstract

Titanium oxy-nitride ($TiN_O_y$) thin films were deposited on $SiO_2$/Si substrates using reactive dc magnetron sputtering, and were then annealed at various temperatures in air ambient to incorporate oxygen into the films. The effect of annealing temperature on the structural and electrical properties of the films was investigated. The grain size of the films decreases with increasing annealing temperature. On the other hand, crystallinity of the films is independent of annealing temperature in air ambient. Resistivity of the films increases remarkably as an annealing temperature increases and temperature coefficience of resistance (TCR) of the films varies from a positive value to a negative value. The films annealed at $350^{\circ}C$ for 30 min exhibited a near-zero TCR value of approximately -5 ppm/K. The decrease of the grain size with increasing annealing temperature was attributed to an increase of oxygen concentration incorporated into the films during anncaling treatment.

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