• Membrane and Water Treatment
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• v.4 no.2
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• pp.109-126
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• 2013

Surface modification by low-pressure ammonia ($NH_3$) plasma on commercial thin-film composite (TFC) membranes was investigated in this study. Surface hydrophilicity, total surface free energy, ion exchange capacity (IEC) and zeta (${\zeta}$)-potentials were determined for the TFC membranes. Qualitative and quantitative analyses of the membrane surface chemistry were conducted by attenuated total reflectance Fourier transform infrared (ATR FT-IR) spectroscopy. Results showed that the $NH_3$ plasma treatment increased the surface hydrophilicity, in particular at a plasma treatment time longer than 5 min at 50 W of plasma power. Total surface free energy was influenced by the basic polar components introduced by the $NH_3$ plasma, and isoelectric point (IEP) was shifted to higher pH region after the modification. A ten (10) min $NH_3$ plasma treatment at 90 W was found to be adequate for the TFC membrane modification, resulting in a membrane with better characteristics than the TFC membranes without the modification for water treatment. The thin-film chemistry (i.e., fully-aromatic and semi-aromatic nature in the interfacial polymerization) influenced the initial stage of plasma modification.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.29-35
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• 2004

We have deposited the W-N diffusion barrier on Si substrate with $NH_3$ pulse plasma enhanced atomic layer deposition (PPALD) method by using $WF_6$ and $NH_3$ gases. The $WF_6$ gas reacts with Si that the surface corrosion occurs severely, but the $NH_3$ gas incorporated with pulse plasma and $WF_6$ gas are easily deposited W-N thin film without Si surface corrosion. Because the $NH_3$ with pulse plasma can be active species dissociated and chemisorbed on Si. Thus the Si surface are covered and saturated with nitrogen, which are able to deposit the W-N thin film. We also examine the deposition mechanism and the effect of $NH_3$ pulse plasma treatment.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.27-31
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• 2018

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2309-2314
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• 2012

Ag deposited N-$TiO_2$ composite nanoparticles were prepared via $NH_3$ plasma treatment. X-ray diffraction, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. The plasma treatment did not change the phase composition and particle sizes of $TiO_2$ samples, but extended its absorption edges to the visible light region. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activities of Ag deposited N-$TiO_2$ composite nanoparticles were much higher than Ag-$TiO_2$, N-$TiO_2$, and P25. A possible mechanism for the photocatalysis was proposed.

• Membrane Journal
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• v.13 no.2
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• pp.73-80
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• 2003

Abstract: The surfaces of poly (methylpentene)(PMP) were modified by Af and $NH_3$ plasma treatment, and their effects on permeation characteristics were investigated. The mole ratio of O/C in the surface was increased with Ar plasma treatment and consequently the surface became hydrophilic because of the possible formation of -OH, -COOH and C=O. The surface treated by $NH_3$ plasma also became hydrophilic due to the formation of amine and/or amide groups. The $CO_2$ permeability and its actual selectivity over N_2$ were 182 baller and 6.17 for the optimum condition of Ar-30W-6min, while 144 Baller and 6.13 for that of $NH_3$-30 W-8 min.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• Restorative Dentistry and Endodontics
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• v.42 no.2
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• pp.125-133
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• 2017

Objectives: This study compared the effect of hexamethyldisiloxane (HMDSO) and ammonia ($NH_3$) plasmas on the bond strength of resin cement to fiber posts with conventional treatments. Materials and Methods: Sixty-five fiber posts were divided into 5 groups: Control (no surface treatment); $H_2O_2$ (24% hydrogen peroxide for 1 min); Blasting (blasting with aluminum oxide for 30 sec); $NH_3$ ($NH_3$ plasma treatment for 3 min); HMDSO (HMDSO plasma treatment for 15 min). After the treatments, the Ambar adhesive (FGM Dental Products) was applied to the post surface (n = 10). The fiber post was inserted into a silicon matrix that was filled with the conventional resin cement Allcem Core (FGM). Afterwards, the post/cement specimens were cut into discs and subjected to a push-out bond strength (POBS) test. Additionally, 3 posts in each group were evaluated using scanning electron microscopy. The POBS data were analyzed by one-way analysis of variance and the Tukey's honest significant difference post hoc test (${\alpha}=0.05$). Results: The Blasting and $NH_3$ groups showed the highest POBS values. The HMDSO group showed intermediate POBS values, whereas the Control and $H_2O_2$ groups showed the lowest POBS values. Conclusion: Blasting and $NH_3$ plasma treatments were associated with stronger bonding of the conventional resin cement Allcem to fiber posts, in a procedure in which the Ambar adhesive was used.

• Korean Chemical Engineering Research
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• v.40 no.6
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• pp.687-693
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• 2002

The surface of polyethersulfone(PES) membrane treated by Ar, $NH_3$ plasma, and the effects were observed before and after the treatment. The membrane treated by Ar plasma was increased the O/C ratio and measured the hydrophilic group, and the one by $NH_3$ plasma was attached the amine group and the amino group. In addition, with the wettability of polyethersulfone membrane $CO_2$ and the polar functional groups of surface interacted increasingly. Thus by comparable increase of the soluble selectivity $CO_2$ to $N_2$ both the permeability and the selectivity of $CO_2$ was improved. The optimum condition for the $CO_2$ permeation and actual separation factor of the plasma treated membrane was as follows; the measurement of Ar-10 W-2 min plasma treatment was $13.19{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$ and 20.12, and the measurement of $NH_3$-50 W-2 min plasma treatment was $15.40{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$ and 20.06.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.131-131
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• 2011

이종접합 태양전지 제작을 위해 기판의 buffer layer로 사용되는 기존의 a-Si 박막을 SiON 박막으로 대체하려는 연구가 진행 중이다. 기존의 a-Si 박막은 대면적에서 균일도를 담보하기 어렵고, 열적 안정성에 취약한 문제점이 있다. 이에 반해 SiON 박막은 일종의 화학 반응인 oxidation 방법으로 형성이 되기 때문에 막의 균일도를 담보 할 수 있고, $400^{\circ}C$이상의 온도에서 형성되기 때문에 열적 안정성이 우수한 장점이 있다. 이러한 장점에도 불구하고 기판위에 직접 형성이 되기 때문에 기판과 SiON 계면 사이의 pssivation이 무엇보다 중요하다. 본 연구에서는 비정질 실리콘 이종접합 태양전지에 적용키 위한 SiON 박막을 형성하고, 기판과 SiON 계면에서의 passivation 향상을 위한 계면 결함 감소에 대한 연구를 진행하였다. 실험을 위한 SiON 박막은 공정온도 $450^{\circ}C$, 공정압력 100 mTorr, 증착파워 120 mW/cm2에서 5분간 증착하였으며, 이때 50 sccm의 N2O 가스를 주입하였다. 증착된 박막은 2~4 nm의 두께로 증착이 되었으며, 1.46의 광학적 굴절률을 가지는 것으로 분석되었다. 계면의 결함을 줄이기 위해 PECVD를 이용한 NH3 plasma treatment를 실시하였다. 공정온도 $400^{\circ}C$, 공정압력 150mTorr~450 mTorr, 플라즈마 파워 60mW/cm2에서 30분간 진행하였으며, 50 sccm의 N2O 가스를 주입하였다. 계면의 결함이 줄었는지 확인하기 위해 C-V 측정을 위한 시료를 제작하여 분석을 하였다. 실험 결과 VFB가 NH3 plasma treatment 이후 positive 방향으로 shift 됨을 알 수 있었다. Dit 분석을 통해 공정 압력 450 mTorr에서 $4.66{\times}108$[cm2/eV]로 가장 낮은 계면 결함 밀도를 확인 할 수 있었다. 결과적으로 NH3 plasma 처리를 통해 positive charge를 갖는 N-content가 형성되었음을 예측해 볼 수 있으며, N-content가 증가하면, 조밀한 Si-N 결합을 형성하면서, boron 및 phosphorus diffusion을 막는데 효과적이다. 또한, plasma treatment 과정에서 H-content에 의한 passivation 효과를 기대할 수 있다.