Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
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Improved Dit between ALD HfAlO Dielectric and InGaAs Substrate Using NH3 Plasma Passivation

InGaAs 위의 NH3 Plasma Passivation을 이용한 ALD HfAlO유전체 계면전하(Dit) 향상

  • Choi, Jae Sung (Department of Semiconductor Equipment Engineering, Far East University)
  • 최재성 (극동대학교 과학기술대학 반도체장비공학과)
  • Received : 2018.11.04
  • Accepted : 2018.12.18
  • Published : 2018.12.31
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Abstract

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

Keywords

References

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