Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.304.1-304.1
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- 2016
Plasma nitridation of atomic layer deposition-Al2O3 by NH3 in PECVD
- Cha, Ham cho rom (Graduate School of Energy Science & Technology, Chungnam National University) ;
- Cho, Young Joon (Graduate School of Energy Science & Technology, Chungnam National University) ;
- Chang, Hyo Sik (Graduate School of Energy Science & Technology, Chungnam National University)
- Published : 2016.02.17
Abstract
We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of
Keywords
- Nitridation;
- Aluminum oxynitride (AlON);
- NH3 plasma treatment;
- Aluminum oxide (Al2O3);
- plasma-enhanced chemical vapor deposition (PECVD)