Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Production and Analysis on High Quality of Thin Film Transistors Using NH3 Plasma Treatment

NH3 Plasma Treatment를 사용한 고성능 TFT 제작 및 분석

  • Park, Heejun (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Nguyen, Van Duy (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
  • 박희준 (성균관대학교 정보통신대학) ;
  • ;
  • 이준신 (성균관대학교 정보통신대학)
  • Received : 2017.04.23
  • Accepted : 2017.05.19
  • Published : 2017.08.01
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Abstract

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

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References

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