• 한국분말재료학회지
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• 제20권1호
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• pp.19-23
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• 2013

Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using $Ru(EtCp)_2$ and $NH_3$ plasma. To optimize Ru PEALD process, the effect of growth temperature, $NH_3$ plasma power and $NH_3$ plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of $270^{\circ}C$ and $NH_3$ plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat $SiO_2$/Si substrate when the $Ru(EtCp)_2$ and $NH_3$ plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased $NH_3$ plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, $NH_3$ plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of $270^{\circ}C$. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat $SiO_2$/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer $NH_3$ plasma time improved the step coverage.

• 반도체디스플레이기술학회지
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• 제17권4호
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• pp.27-31
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• 2018

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

• Membrane and Water Treatment
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• 제4권2호
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• pp.109-126
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• 2013

Surface modification by low-pressure ammonia ($NH_3$) plasma on commercial thin-film composite (TFC) membranes was investigated in this study. Surface hydrophilicity, total surface free energy, ion exchange capacity (IEC) and zeta (${\zeta}$)-potentials were determined for the TFC membranes. Qualitative and quantitative analyses of the membrane surface chemistry were conducted by attenuated total reflectance Fourier transform infrared (ATR FT-IR) spectroscopy. Results showed that the $NH_3$ plasma treatment increased the surface hydrophilicity, in particular at a plasma treatment time longer than 5 min at 50 W of plasma power. Total surface free energy was influenced by the basic polar components introduced by the $NH_3$ plasma, and isoelectric point (IEP) was shifted to higher pH region after the modification. A ten (10) min $NH_3$ plasma treatment at 90 W was found to be adequate for the TFC membrane modification, resulting in a membrane with better characteristics than the TFC membranes without the modification for water treatment. The thin-film chemistry (i.e., fully-aromatic and semi-aromatic nature in the interfacial polymerization) influenced the initial stage of plasma modification.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.479-483
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• 2017

The effect of $NH_3$ plasma treatment on device characteristics was confirmed for an optimized thin film transistor of poly-Si formed by ELA. When C-V curve was checked for MIS (metal-insulator-silicon), Dit of $NH_3$ plasma treated and MIS was $2.7{\times}10^{10}cm^{-2}eV^{-1}$. Also in the TFT device case, it was decreased to the sub-threshold slope of 0.5 V/decade, 1.9 V of threshold voltage and improved in $26cm^2V^{-1}S^{-1}$ of mobility. Si-N and Si-H bonding reduced dangling bonding to each interface. When gate bias stress was applied, the threshold voltage's shift value of $NH_3$ plasma treated device was 0.58 V for 1,000s, 1.14 V for 3,600s, 1.12 V for 7,200s. As we observe from this quality, electrical stability was also improved and $NH_3$ plasma treatment was considered effective for passivation.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.29-35
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• 2004

암모니아 펄스플라즈마를 이용하여 $WF_6$ 가스와 $NH_3$ 가스를 교대로 흘려줌으로써 Si 기판위에 질화텅스텐 확산방지막을 증착하였다. $WF_6$ 가스는 Si과 반응하여 표면침식이 과도히 발생하였으나 암모니아 ($NH_3$)가스를 펄스 플라즈마를 인가하여 $WF_6$와 같이 사용하면 Si 표면을 질화처리 함으로써 표면침식을 막아주며 질화텅스텐 박막을 쉽게 증착할 수 있었다. 그 이유는 암모니아 가스의 분해를 통한 Si 기판의 흡착을 용이하게 하여 질화텅스텐 박막 증착이 가능하기 때문이다. 이러한 증착 미케니즘과 암모니아 펄스 플라즈마 효과에 대하여 조사하였다.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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• pp.327-334
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• 2004

Spectroscopic and electrostatic probe measurements were made to examine plasma characteristics with or without a metal plate for a 10-㎾-class direct-current arcjet Heat fluxes into the plate from the plasma were also evaluated with a Nickel slug and thermocouple arrangement. Ammonia and mixtures of nitrogen and hydrogen were used. The NH$_3$ and $N_2$+3H$_2$ plasmas in the nozzle and in the downstream plume without a plate were in thermodynamical nonequilibrium states. As a result, the H-atom electronic excitation temperature and the $N_2$ molecule-rotational excitation temperature intensively decreased downstream in the nozzle although the NH molecule-rotational excitation temperature did not show an axial decrease. Each temperature was kept in a small range in the plume without a plate except for the NH rotational temperature for NH$_3$ gas. On the other hand, as approaching the plate, the thermodynamical nonequilibrium plasma came to be a temperature-equilibrium one because the plasma flow tended to stagnate in front of the plate. The electron temperature had a small radial variation near the plate. Both the electron number density and the heat flux decreased radially outward, and an increase in H$_2$ mole fraction raised them at a constant radial position. In cases with NH$_3$ and $N_2$+3H$_2$ a large number of NH radical with a radially wide distribution was considered to cause a large amount of energy loss, i.e., frozen flow loss, for arcjet thrusters.

• 한국세라믹학회지
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• 제29권9호
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• pp.681-688
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• 1992

Ultrafine Si3N4 and Si3N4+SiC mixed powders were synthesized through thermal plasma chemical vapor deposition(CVD) using a hybrid plasma, which was characterized by the supersposition of a radio-frequency plasma and arc jet. The reactant SiCl4 was injected into an arc jet and completely decomposed in a hybrid plasma, and the second reactant CH4 and/or NH3 mixed with H2 were injected into the tail flame through double stage ring slits. In the case of ultrafine Si3N4 powder synthesis, reaction efficiency increased significantly by double stage injection compared to single stage one, although crystallizing behaviors depended upon injection speed of reactive quenching gas (NH3+N2) and injection method. For the preparation of Si2N4+SiC mixed powders, N/C composition ratio could be controlled by regulating the injection speed of NH3 and/or CH4 reactant and H2 quenching gas mixtures as well as by adjusting the reaction space.

• 산업기술연구
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• 제19권
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• pp.331-341
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• 1999

We analyzed theoretically the removal efficiency and the particle growth inside the pulse corona discharge reactor to remove $NO_x$ and investigated the effects of process variables such as the NO and $NH_3$ input concentrations. Most of NO is converted into $NO_2$ and $HNO_3$ and the $HNO_3$ reacts with $NH_3$ to form the $NH_4NO_3$ particles. About 6.4% of NO is converted into $HNO_2$ which form the $NH_4NO_2$ particles by reaction with $NH_3$. Some of $NO_2$ follows the reaction pathway to form $NO_3$ and $N_2O_5$. The amount of particles formed inside the reactor is basically determined by the input $NH_3$ concentration. The ratio of NO to $NH_3$ affects the reactor length for particle formation significantly. The higher the input concentrations of NO and $NH_3$ are, the faster the particles grow.

• 한국세라믹학회지
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• 제34권3호
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• pp.249-256
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• 1997

100-500KHz범위의 주파수전원을 인가하여 발생한 플라즈마를 이용하여 질화붕소(boron nitride)막의 합성시 육방정상(hexagonal phase)과 입방정상(cubic phase)의 생성거동을 관찰하였다. BCl3와 NH3를 붕소와 질소의 공급기체로 선택하였고 Ar과 수소를 carrier기체로 사용하였다. 합성변수로는 플라즈마전원의 전압, 기판의 bias, 합성압력, 기체의 조성, 기판의 온도이었는데, 합성된 박막은 FT-IR결과로부터 육방정과 입방정의 혼합상으로 나타났고, 각 상의 분률은 변수의 크기에 의존하였다. TEM분석결과 육방정으로만 구성된 박막은 비정질상으로 이루어졌으며, 입방정과 육방정의 혼합상의 경우는 비정질기지상에 수십 nanometer크기의 입방정입자가 분산된 구조를 하고 있었다.

• 한국가스학회지
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• 제26권5호
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• pp.35-40
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• 2022

태양광 전지 제조 설비인 PCVD(Plasma Chemical Vapor Deposition)는 NH₃, SIH₄, O₂를 Chamber에 주입하여 생성된 Plasma를 Wafer에 증착시키는 설비이다. PCVD설비에서 Gas 이동과 주입이 Gas Cabinet에서 이루어지며, 내부에는 MFC, Regulator, Valve, Pipe 등이 복잡하게 연결되어 많은 누출 점이 존재한다. 폭발 상한값(UEL) 33.6%, 폭발 하한값(LEL) 15%의 NH₃ 누출 시 폭발을 예방하기 위해서는 NH₃ 농도가 폭발 범위에서 벗어날 수 있는 희석능력이 있어야 한다. 본 연구는 기존 PCVD의 Gas Cabinet에 대한 NH₃ Gas 누출 시 희석능력을 3D와 수치로 확인할 수 있는 CFD 분석 기법을 활용하여 분석하였다. 그 결과 중희석에 해당되며 설비 개선을 통해 고환기가 가능하다는 결론을 얻었다.