Journal of Powder Materials (한국분말재료학회지)

The Korean Powder Metallurgy & Materials Institute (한국분말재료학회 (*구 분말야금학회))
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Optimization of PEALD-Ru Process using Ru(EtCp)2

Ru(EtCp)2 전구체를 이용한 PEALD Ru 공정 최적화에 관한 연구

  • Kwon, Se-Hun (National Core Research Center for Hybrid Materials Solution, Pusan National University) ;
  • Jeong, Young-Keun (National Core Research Center for Hybrid Materials Solution, Pusan National University)
  • 권세훈 (부산대학교 하이브리드소재솔루션 국가핵심연구센터) ;
  • 정영근 (부산대학교 하이브리드소재솔루션 국가핵심연구센터)
  • Received : 2013.01.11
  • Accepted : 2013.02.18
  • Published : 2013.02.28
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Abstract

Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using $Ru(EtCp)_2$ and $NH_3$ plasma. To optimize Ru PEALD process, the effect of growth temperature, $NH_3$ plasma power and $NH_3$ plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of $270^{\circ}C$ and $NH_3$ plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat $SiO_2$/Si substrate when the $Ru(EtCp)_2$ and $NH_3$ plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased $NH_3$ plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, $NH_3$ plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of $270^{\circ}C$. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat $SiO_2$/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer $NH_3$ plasma time improved the step coverage.

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References

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