• 제목/요약/키워드: N generation

검색결과 1,914건 처리시간 0.032초

Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

  • Park, Sung-Hoon;Lee, Jae-Gil;Cho, Chun-Hyung;Choi, Yearn-Ik;Kim, Hyungtak;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권2호
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    • pp.215-220
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    • 2016
  • Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.

GaN Power FET 모델링에 관한 연구 (Study on Modeling of GaN Power FET)

  • 강이구;정헌석;김범준;이용훈
    • 한국전기전자재료학회논문지
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    • 제22권12호
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    • pp.1018-1022
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    • 2009
  • In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

리사이클 고무 매트의 N-(fluorodichlomethylthio) Phthalimide-Ag Complex에 관한 항미생물 활성 연구 (A Study on Antimicrobial Activity of N-(fluorodichlomethylthio) Phthalimide-Ag Complex of Reclaimed Rubber Mat)

  • 김기준;이주엽;박태술
    • 한국응용과학기술학회지
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    • 제28권4호
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    • pp.491-496
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    • 2011
  • N-(fluorodichlomethylthio) phthalimide-silver complexes were prepared and investigated the antimicrobial activity on rubber mat manufactured with waste rubber. We are exposed to harmful bacteria and fungi all the time. We manufactured antimicrobial mat to be imposed to mats that it can prevent generation of bacteria and microorganisms, and restrict their reproduction. Infection of medical devices causes significant morbidity and mortality. For aim of this study, we measured the antimicrobial mat manufactured with N-(fluorodichlomethylthio) phthalimide-Ag complex by CCD, FT-IR and NMR. The effect of mole ratio of N-(fluorodichlomethylthio) phthalimide-Ag complex on antibacterial activity to bacteria and fungi is investigated. Reduction rate is evaluated using the Quinn method. Escherichia Coli is effectively inhibited than Staphylococcus aureus by antimicrobial mat.

DBD-PLD 방법을 이용하여 N 도핑된 ZnO 박막의 특성 조사 (Properties of N doped ZnO grown by DBD-PLD)

  • 임재현;강민석;송용원;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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    • pp.15-16
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    • 2008
  • We have grown N-doped ZnO thin films on sapphire substrate by employing dielectric barrier discharge in pulsed laser deposition (DBD-PLD). DBD guarantees an effective way for massive in-situ generation of N-plasma under the conventional PLD process condition. Low-temperature photoluminescence spectra of the N-doped ZnO film provided near band-edge emission after thermal annealing process. The emission peak was resolved by Gaussian fitting and showed a dominant acceptor-bound exciton peak ($A^0X$) that indicated the successful p-type doping of ZnO with N.

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Noise Analysis of Sub Quarter Micrometer AlGaN/GaN Microwave Power HEMT

  • Tyagi, Rajesh K.;Ahlawat, Anil;Pandey, Manoj;Pandey, Sujata
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제9권3호
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    • pp.125-135
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    • 2009
  • An analytical 2-dimensional model to explain the small signal and noise properties of an AlGaN/GaN modulation doped field effect transistor has been developed. The model is based on the solution of two-dimensional Poisson's equation. The developed model explains the influence of Noise in ohmic region (Johnson noise or Thermal noise) as well as in saturated region (spontaneous generation of dipole layers in the saturated region). Small signal parameters are obtained and are used to calculate the different noise parameters. All the results have been compared with the experimental data and show an excellent agreement and the validity of our model.

GENERATING PAIRS FOR THE SPORADIC GROUP Ru

  • Darafsheh, M.R.;Ashrafi, A.R.
    • Journal of applied mathematics & informatics
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    • 제12권1_2호
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    • pp.143-154
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    • 2003
  • A finite group G is called (l, m, n)-generated, if it is a quotient group of the triangle group T(l, m, n) = 〈$\chi$, y, z│$\chi$$\^$l/ = y$\^$m/ = z$^n$ = $\chi$yz = 1〉. In [19], the question of finding all triples (l, m, n) such that non-abelian finite simple group are (l, m, n)-generated was posed. In this paper we partially answer this question for the sporadic group Ru. In fact, we prove that if p, q and r are prime divisors of │Ru│, where p < q < r and$.$(p, q) $\neq$ (2, 3), then Ru is (p, q, r)-generated.

효율인 GRM 계수 생성에 관한 연구 (A Study on Efficient GRM Coefficient Generation)

  • 박춘명
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2012년도 추계학술대회
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    • pp.763-764
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    • 2012
  • 본 논문에서는 GRM 계수를 효율적으로 생성할 수 있는 방법을 제안하였다. 제안한 방법은 1번째 행에 2n개의 주어진 RM계수를 표현하고 고정된 수식에 의해 하위 열에 순차적인 모듈로 합을 행하는 병렬형 방법이다. 제안한 방법의 효율성을 기존의 방법들과 비교하였으며 그 결과 n개의 입력 변수에서 모든 극수의 GRM 계수들을 구하는데 같은 시스템 복잡도에 대하여 $2{\times}$(n-1변수의 Ex-OR 개수) + $3^{n-1}$개의 2입력 Ex-OR만을 필요로 하였고 기존의 방법에 비해 매우 행상되었음을 확인하였다.

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5G-Advanced를 위한 N2/N3 인터페이스 DoS 공격 영향 분석 (Impact Analysis of DoS Attacks on N2/N3 Interfaces in a 5G-Advanced Core Network)

  • 박재형;이종혁
    • 한국정보처리학회:학술대회논문집
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    • 한국정보처리학회 2024년도 춘계학술발표대회
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    • pp.383-385
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    • 2024
  • 이동통신 분야 사실표준화 기구인 3GPP(3rd Generation Partnership Project)에서는 기존의 5G 이동통신 기술을 향상시키기 위한 5G-Advanced 연구를 시작했다. 5G 및 5G-Advanced 시대에 접어들면서 네트워크를 향상시키기 위한 다양한 요소기술들이 등장하였지만, 이러한 기술 변화에 비례하여 네트워크를 위협하는 공격 표면들이 증가할 것으로 예상된다. 점진적인 네트워크 보안 위협에 대응하기 위해 보안 기술은 에드온(Add-on) 형태로 개발되었지만, 이는 이동통신시스템에서 보안 기술의 신뢰성을 낮추고 네트워크에 대한 보안 품질을 보장하지 못한다. 따라서, 본 논문에서는 5G-Advanced에서 사용되는 N2/N3 인터페이스에서 발생가능한 DoS(Denial of Service) 공격에 대해 실험하고 분석한다. 분석 결과는 5G-Advanced 이동통신시스템의 공격 표면을 나타내고 보안 내재화의 필요성을 강조한다.

항우울제 중독환자의 심장독성에 관한 연구 (Cardiac Toxicity in Patients with Antidepressant Intoxication)

  • 박정택;최세민;오영민;오주석;경연영;조항주;최경호
    • 대한임상독성학회지
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    • 제8권2호
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    • pp.97-105
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    • 2010
  • Purpose: Although cardiac toxicity is a key parameter of significant toxicity, in antidepressant intoxication, there are few studies on the cardiac toxicity of serotonin reuptake inhibitor and the intoxication with the new generation of antidepressants. The aim of this study is to investigate the relative cardiac toxicity of serotonin reuptake inhibitor and intoxication with the new generation of antidepressants as compared with that of tricyclic antidepressant intoxication. Methods: We retrospectively reviewed the medical records of 109 antidepressant intoxicated patients who visited the Emergency Department from January, 2005 to December, 2009 to collect and analyze the demographic and clinical data. Sixteen patients were excluded. The enrolled seventy eight patients were classified into three groups: the tricyclic antidepressant group (TCA) (n=32), the selective serotonin reuptake inhibitor subgroup (SSRI) (n=28) and the new generation antidepressant subgroup (NGA) (n=18). Results: The demographic and clinical data of the SSRI and NGA groups were not significantly different from that of the TCA group. The QRS duration of the SSRI subgroup ($86.4{\pm}12.0$ msec) and the NGA subgroup ($91.8{\pm}11.9$ msec) was not significantly different from that of the TCA group ($90.0{\pm}13.5msec$) (p=0.598). The QTc interval of the SSRI group ($444.5{\pm}33.5msec$) and the NGA group ($434.9{\pm}35.9msec$) (p=0.260) were not significantly different from that of the TCA group ($431.2{\pm}44.1msec$) (p=0.287). Conclusion: Intoxication with SSRI and the new generation antidepressants seemed to show significant cardiac toxicity, like what is seen in tricyclic antidepressant intoxication. Clinicians must pay attention to SSRI and new generation antidepressant intoxication.

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인간 배아 줄기세포 유래 신경세포로의 분화: BDNF와 PDGF-bb가 기능성 신경세포 생성에 미치는 영향 (In Vitro Neural Cell Differentiation Derived from Human Embryonic Stem Cells: Effects of PDGF-bb and BDNF on the Generation of Functional Neurons)

  • 조현정;김은영;이영재;최경희;안소연;박세필;임진호
    • Clinical and Experimental Reproductive Medicine
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    • 제29권2호
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    • pp.117-127
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    • 2002
  • Objective: This study was to investigate the generation of the functional neuron derived from human embryonic stem (hES, MB03) cells on in vitro neural cell differentiation system. Methods: For neural progenitor cell formation derived from hES cells, we produced embryoid bodies (EB: for 5 days, without mitogen) from hES cells and then neurospheres (for $7{\sim}10$ days, 20 ng/ml of bFGF added N2 medium) from EB. And then finally for the differentiation into mature neuron, neural progenitor cells were cultured in i) N2 medium only (without bFGF), ii) N2 supplemented with 20 ng/ml platelet derived growth factor-bb (PDGF-bb) or iii) N2 supplemented with 5 ng/ml brain derived neurotrophic factor (BDNF) for 2 weeks. Identification of neural cell differentiation was carried out by immunocytochemistry using $\beta_{III}$-tubulin (1:250), MAP-2 (1:100) and GFAP (1:500). Also, generation of functional neuron was identified using anti-glutamate (Sigma, 1:1000), anti-GABA (Sigma, 1:1000), anti-serotonin (Sigma, 1:1000) and anti-tyrosine hydroxylase (Sigma, 1:1000). Results: In vitro neural cell differentiation, neurotrophic factors (PDGF and BDNF) treated cell groups were high expressed MAP-2 and GFAP than non-treated cell group. The highest expression pattern of MAP-2 and $\beta_{III}$-tubulin was indicated in BDNF treated group. Also, in the presence of PDGF-bb or BDNF, most of the neural cells derived from hES cells were differentiated into glutamate and GABA neuron in vitro. Furthermore, we confirmed that there were a few serotonin and tyrosine hydroxylase positive neuron in the same culture environment. Conclusion: This results suggested that the generation of functional neuron derived from hES cells was increased by addition of neurotrophic factors such as PDGF-bb or BDNF in b-FGF induced neural cell differentiation system and especially glutamate and GABA neurons were mainly produced in the system.