JSTS:Journal of Semiconductor Technology and Science

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Noise Analysis of Sub Quarter Micrometer AlGaN/GaN Microwave Power HEMT

  • Tyagi, Rajesh K. (Department of Electronics and Communication Engineering, Amity School of Engineering and Technology, GGS Indraprastha University) ;
  • Ahlawat, Anil (Department of Electronics and Communication Engineering, Amity School of Engineering and Technology, GGS Indraprastha University) ;
  • Pandey, Manoj (Department of ECE, SEM University, Modinagar Campus) ;
  • Pandey, Sujata (Department of Electronics and Communication Engineering, Amity School of Engineering and Technology, GGS Indraprastha University)
  • Published : 2009.09.30
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Abstract

An analytical 2-dimensional model to explain the small signal and noise properties of an AlGaN/GaN modulation doped field effect transistor has been developed. The model is based on the solution of two-dimensional Poisson's equation. The developed model explains the influence of Noise in ohmic region (Johnson noise or Thermal noise) as well as in saturated region (spontaneous generation of dipole layers in the saturated region). Small signal parameters are obtained and are used to calculate the different noise parameters. All the results have been compared with the experimental data and show an excellent agreement and the validity of our model.

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References

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