Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on Modeling of GaN Power FET

GaN Power FET 모델링에 관한 연구

  • 강이구 (극동대학교 컴퓨터정보표준학부) ;
  • 정헌석 (극동대학교 컴퓨터정보표준학부) ;
  • 김범준 (극동대학교 컴퓨터정보표준학부) ;
  • 이용훈 (극동대학교 컴퓨터정보표준학부)
  • Published : 2009.12.01
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Abstract

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

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References

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