• Korean Journal of Materials Research
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• v.22 no.10
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• pp.539-544
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• 2012

We have grown AlN nanorods and AlN films using plasma-assisted molecular beam epitaxy by changing the Al source flux. Plasma-assisted molecular beam epitaxy of AlN was performed on c-plane $Al_2O_3$ substrates with different levels of aluminum (Al) flux but with the same nitrogen flux. Growth behavior of AlN was strongly affected by Al flux, as determined by in-situ reflection high energy electron diffraction. Prior to the growth, nitridation of the $Al_2O_3$ substrate was performed and a two-dimensionally grown AlN layer was formed by the nitridation process, in which the epitaxial relationship was determined to be [11-20]AlN//[10-10]$Al_2O_3$, and [10-10]AlN//[11-20]$Al_2O_3$. In the growth of AlN films after nitridation, vertically aligned nanorod-structured AlN was grown with a growth rate of $1.6{\mu}m/h$, in which the growth direction was <0001>, for low Al flux. However, with high Al flux, Al droplets with diameters of about $8{\mu}m$ were found, which implies an Al-rich growth environment. With moderate Al flux conditions, epitaxial AlN films were grown. Growth was maintained in two-dimensional or three-dimensional growth mode depending on the Al flux during the growth; however, final growth occurred in three-dimensional growth mode. A lowest root mean square roughness of 0.6 nm (for $2{\mu}m{\times}2{\mu}m$ area) was obtained, which indicates a very flat surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.143-148
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• 2019

We have successfully fabricated high aspect-ratio GaN-based nanowires on Si substrates using molecular beam epitaxy (MBE) system for high-efficiency hydrogen generation of photoelectrochemical water splitting. Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) demonstrated that p-GaN:Mg and p-InGaN nanowires were grown vertically on the substrate with high density. Furthermore, it was also confirmed that the emission wavelength of p-InGaN nanowire can be adjusted from 552 nm to 590 nm. Such high-aspect ratio p-InGaN nanowire structure will be a solid foundation for the realization of ultrahigh-efficiency photoelectrochemical water splitting through sunlight.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.46 no.4
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• pp.37-43
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• 2014

The crystallinity and molecular weight of cotton linter need to be controlled to be more easily dissolved in NMMO during manufacture of clothing fabrics. Electron beam irradiation and sulfuric acid treatment were used as pre-treatment to reduce molecular weight of cotton linter more efficiently, and after the pre-treatment, peroxide bleaching was followed in alkaline condition. After those processes, the crystalline indices of the cotton linters were measured by XRD method, and other properties such as their alpha cellulose contents and degree of polymerization were measured. It was found that the crystallinity index of cotton linter was decreased as the irradiation of electron beam increased while increased as the dose of sulfuric acid increased. These results strongly suggested that electron beam damaged the crystalline structure of the cellulose directly while sulfuric acid dissolved mostly non-crystalline area of the cellulose structure.

• Journal of the Korean Society of Industry Convergence
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• v.15 no.3
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• pp.71-77
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• 2012

This study gives the optimal reaction conditions, reaction mechanisms, reaction rates leaded from the oxidation of phenol by electron beam accelerator and ozone used for recent water treatment. It gives the new possibility of water treatment process to effectively manage industrial sewage containing toxic organic compounds and biological refractory materials. The high decomposition of phenol was observed at the low dose rate, but at this low dose rate, the reaction time was lengthened. So we must find out the optimal dose rate to promote high oxidation of reactants. The reason why the TOC value of aqueous solution wasn't decreased at the low dose was that there were a lot of low molecular organic acids as an intermediates such as formic acid or glyoxalic acid. In order to use both electron beam accelerator and biological treatment for high concentration refractory organic compounds, biological treatment is needed when low molecular organic compounds exist abundantly in sewage. In this experiment, the condition of making a lot of organic acids is from 5 kGy into 20 kGy dose. Decomposition rate of phenol by electron beam accelerator was first order reaction up to 300ppm phenol solution on the basic of TOC value and also showed first order reaction by using both air and ozone as an oxidants.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.81-87
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• 1993

The growth thickness uniformity of epitaxial layers deposited using a moiecular beam epitaxy system is calculated from the arrangement of molecular beam source and the substrate and the geometric dimensions of the crucible in order to predict the optimum design conditions of the prototype MBE system. The thickness uniformity better than 5% over a 3-inch wafer can be obtained by keeping the distance between the substrate and the crucible's orifice longer than 20cm, the tapering angle of the crucible larger than 6$^{\circ}$, and the angle between the normal to the substrate at the center and the crucible axis as larger as possible. In addition, the growth yield decreases to below 51% as the distance between the substrate and the orifice becomes longer than 25cm.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.47 no.6
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• pp.81-88
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• 2015

The molecular weight (MW) and crystallinity of cotton linter need to be controlled to be dissolved well in N-methylmorpholine N-oxide (NMMO) solvent for manufacturing regenerated fibers of clothing fabrics. Electron beam irradiation or sulfuric acid pre-treatment followed by alkaline peroxide bleaching has been used to control MW effectively and to improve brightness of cotton linter. Auto-hydrolysis of cotton linter without electron beam irradiation or chemical pre-treatment was found to be effective as an alternative pre-treatment method. Removal of metal ions, that hampered dissolution of cotton linter by NMMO, was also investigated when the auto-hydrolysis was accompanied with ionic polymers and chelating agent.

• Proceedings of the Korean Magnestics Society Conference
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• 2009.12a
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• pp.190-190
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• 2009

We report the epitaxial growth of MgO and CoFe/MgO on Ge (001) substrates using molecular beam epitaxy. It was found that the epitaxial growth of a MgO film on Ge could be realized at a low growth temperature of $125{\pm}5^{\circ}C$ and the MgO matches the Ge with a cell ratio of $\sqrt{2}$:1 which renders MgO rotated by $45^{\circ}$ relative to Ge. In-situ and ex-situ structural characterizations reveal the epitaxial crystal growth of bcc CoFe/MgO on Ge with the in-plane crystallographic relationship of CoFe(001)[100] || MgO(001)[110] || Ge(001)[100], exhibiting sharp interfaces in the (001) matching planes. The saturation magnetization of the sample is $1430{\pm}20$ emu/cc, which is comparable to the value of bulk CoFe.

• Macromolecular Research
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• v.14 no.6
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• pp.640-645
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• 2006

Polyethylene of bimodal molecular weight distribution was irradiated with an electron beam. The thermal and mechanical properties were examined by DSC, small and wide angle X-ray scattering and static tensile test according to the crystal morphology of the irradiated samples. The crystal morphology change upon irradiation, as revealed by wide angle X-ray scattering, correlated well with the changes in melting enthalpy, whereas the lamellar thickness and the amorphous gap thickness remained virtually unchanged at irradiation doses up to 500 kGy. Crosslinks in the crystal domains became evident at an energy level of 250 kGy, resulting in reduced crystallinity and crystal size of the (110) and (200) planes. The samples became stiff and brittle with increased irradiation dose, which seem to be more relevant to the amount of cross links than the crystal morphology changes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.310-310
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• 2012

ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with ${\alpha}=3.3{\times}10^{-2}eV/K$ and ${\beta}=8.6{\times}10^3K$. The low- and high-temperature activation energies were 9 and 28 meV, respectively. The exciton radiative lifetime of the ZnO thin films showed a non-linear behavior, which was established using a quadratic equation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1005-1009
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• 2006

High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of tarrier transport. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence $({\mu}-PL)$ measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.