Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Realization of 1D-2DEG Composite Nanowire FET by Selective Area Molecular Beam Epitaxy

선택적 분자선 에픽택시 방법에 의한 1D-2DEG 혼성 나노선 FET의 구현

  • 김윤주 (고려대학교 전자컴퓨터공학과, 전자부품연구원 나노광전연구센터) ;
  • 김동호 (고려대학교 전자컴퓨터공학과) ;
  • 김은홍 (고려대학교 전자컴퓨터공학과) ;
  • 서유정 (고려대학교 전자컴퓨터공학과) ;
  • 노정현 (전자부품연구원 나노광전연구센터) ;
  • 한철구 (전자부품연구원 나노광전연구센터) ;
  • ;
  • 김태근 (고려대학교 전자컴퓨터공학과)
  • Published : 2006.11.01
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Abstract

High quality three-dimensional (3D) heterostructures were constructed by selective area (SA) molecular beam epitaxy (MBE) using a specially patterned GaAs (001) substrate to improve the efficiency of tarrier transport. MBE growth parameters such as substrate temperature, V/III ratio, growth ratio, group V sources (As2, As4) were varied to calibrate the selective area growth conditions and the 3D GaAs-AlGaAs heterostructures were fabricated into the ridge type and the V-groove type. Scanning micro-photoluminescence $({\mu}-PL)$ measurements and the following analysis revealed that the gradually (adiabatically) coupled 1D-2DEG (electron gas) field effect transistor (FET) system was successfully realized. These 3D-heterostructures are expected to be useful for the realization of high-performance mesoscopic electronic devices and circuits since it makes it possible to form direct ohmic contact onto the (quasi) 1D electron channel.

Keywords

References

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