• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.320-324
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• 1993

The effect of sputtering conditions on magnetic properties of CoCrMo/Cr magnetic thin film was investigated. Substrate temperature were controlled from R. T to $250^{\circ}C$. The thickness changes of Cr underlayer and CoCrMo magnetic layer were in the range of $1000-2500\AA$ and $300-800\AA$, respectively. Grain size was found to be decreased with increasing magnetic layer thickness(from $500\AA$ to $800\AA$). CoCrMo magnetic layer microstructure showed relatively small dependence on Cr underlayer thickness, substrate temperature. Coercivity increased with increasing Cr underlayer, magnetic layer thickness and substrate temperature. CoCrMo/Cr thin film showed a coercivity of 880 Oe in $700\AA$ magnetic layer thickness and $1000\AA$ Cr underalyer thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• Journal of the Korean institute of surface engineering
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• v.48 no.1
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• pp.23-26
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• 2015

What causes the transformation of a solar cell is the behavior difference of thermal expansion occurred between the substrate and the layer of semiconductor used in the solar cell. Therefore, the substrate has to possess a behavior of thermal expansion that is similar with that of semiconductor layer. This study employed electroforming to manufacture Fe-Ni alloy materials of different compositions. To verify the result from a finite element analysis, a two-dimensional Mo substrate was calculated and its verification experiment was conducted. The absolute values from the finite element analysis of Mo/substrate structure and its verification experiment showed a difference. However, the size of residual stress of individual substrate compositions had a similar tendency. Two-dimensional CIGS/Mo/$SiO_2$/substrate was modeled. Looking into the residual stress of CIGS layer occurred while the temperature declined from $550^{\circ}C$ to room temperature, the smallest residual stress was found with the use of Fe-52 wt%Ni substrate material.

• Tribology and Lubricants
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• v.16 no.3
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• pp.223-230
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• 2000

Factors influencing friction reduction with MODTP(molybdenum dialkyl dithiophosphate) lubricant were investigated through a frictioning experiment using two-cylinder edge surface frictioning tester and XPS surface analysis. The friction reduction effect gained with MoDTP lubricant appeared to be largely attributable to MoS$_2$ formation on the frictioning interface. Under N$_2$ atmosphere, Mo diffused into the metal substrate, easily escaping from MoS$_2$ so the friction reduction effect from MoDTP was not gained. However, when an oxide surface film was preliminary prepared on frictioning surface, this Mo diffusion to metal substrate from MoS$_2$ was effectively inhibited. Then desired lubulication effect of MoDTP was gained even under N$_2$atmosphere. As such, the existence of a surface oxide film on the frictioning surface was concluded to be of essential importance in order to gain a lubrcating effect with MoDTP.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.110-113
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• 2017

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

• Proceedings of the Korean Biophysical Society Conference
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• 2002.06b
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• pp.18-18
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• 2002

Nitrogenase, comprised of the MoFe and Fe proteins, catalyzes the reduction of dinitrogen to ammonia at ambient temperature and pressure. The MoFe protein contains two metal centers, the P-cluster (Fe8S7-8) and the FeMo-cofactor (Fe7S9：homocitrate), the substrate binding site. Despite the availability of the crystal structure of the MoFe protein, suprisingly little is known about the molecular details of catalysis at the active site, and no small-molecule substrate or inhibitor had ever been shown to directly interact with a protein-bound cluster of the functioning enzyme, until our electron-nuclear double resonance(ENDOR) study of CO-inhibited nitrogenase.(omitted)

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.46-46
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• 1988

Structural and magnetic properties of Co-Cr-Mo films were investigated in connection with sputtering conditions. Films were prepared using a convention RF sputtering system. X-ray diffractometry, scanning electron microscopy and transmission electron microscopy were employed to investigate structure properties. Vibrating sample magnetometry was used for coercivity and saturation magnetization measurements. Co-Cr-Mo films displayed reasonable values of perpendicular coercivity and saturation magnetization for perpendicular recording media and showed good perpendicular orientation of the hcp c-axis to the film surface. Perpendicular coercivity was strongly dependent upon substrate technique showed better c-axis orientation than hose using the stationary substrate. Co-Cr-Mo films of 2.9 at. % Mo content showed maximum perpendicular coercivity and saturation magnetization. The films deposited at lower Ar pressure showed good magnetic properties. There was no explicit relationship between the columnar structure and c-axis orientation. Co-Cr-Mo films was found to have suitable structural and magnetic properties for perpendicular recording media.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.523-525
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• 2002

The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.