Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
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Controllable Growth of Single Layer MoS2 and Resistance Switching Effect in Polymer/MoS2 Structure

  • Park, Sung Jae (Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
  • Chu, Dongil (Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
  • Kim, Eun Kyu (Department of Physics and Research Institute for Natural Sciences, Hanyang University)
  • Received : 2017.07.12
  • Accepted : 2017.09.26
  • Published : 2017.09.30
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Abstract

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

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References

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