• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.36-39
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• 2002

Polycrystalline silicon (poly-Si) thin film transistor (TFT) technology is emerging as a key technology for active matrix liquid crystal displays (AMLCD), allowing the integration of both active matrix and driving circuit on the same substrate (normally glass). As high temperature process is not used for glass substrate because of the low softening points below 450$^{\circ}C$. However, high temperature process is required for getting high crystallization volume fraction (i.e. crystallinity). A poly-Si thin film transistor has been fabricated to investigate the effect of high temperature process on the molybdenum (Mo) substrate. Improve of the crystallinity over 75% has been noticed. The properties of structural and electrical at high temperature poly-Si thin film transistor on Mo substrate have been also analyzed using a sputtering method

• 한국자기학회지
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• 제3권4호
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• pp.320-324
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• 1993

스퍼터된 자기기록매체 Co-10at%Cr-2at%Mo/Cr 자성박막의 제조조건이 미세구조와 자기적특성에 미치는 영향을 조사하였다. 기판의 온도는 상온-$250^{\circ}C$로 하였으며 Cr하지층과 CoCrMo층의 두께는 각각 $1000-2500\AA$, $300-800\AA$이었다. CoCrMo층의 두께가 $500{\AA}-800{\AA}$ 증가함에 따라 결정립은 미세화 되었으며 균일한 조직을 나타냈다. 보자력은 기판의 온도, CoCrMo자성층, Cr하지층의 두께 를 증가시켰을때 향상되었다. 기판온도가 $250^{\circ}C$, 자성층의 두께가 $700\AA$, Cr 하지층의 두께가 $1000\AA$일때 880 Oe의 보자력을 나타냈다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.389-389
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• 2012

Molybdenum is one of the most important materials used as a back ohmic contact for $Cu(In,Ga)(Se,S)_2$ (CIGS) solar cells because it has good electrical properties as an inert and mechanically durable substrate during the absorber film growth. Sputter deposition is the common deposition process for Mo thin films. Molybdenum thin films were deposited on soda lime glass (SLG) substrates using direct-current planar magnetron sputtering technique. The outdiffusion of Na from the SLG through the Mo film to the CIGS based solar cell, also plays an important role in enhancing the device electrical properties and its performance. The structure, surface morphology and electrical characteristics of Mo thin films are generally dependent on deposition parameters such as DC power, pressure, distance between target and substrate, and deposition temperature. The aim of the present study is to show the resistivity of Mo layers, their crystallinity and morphologies, which are influenced by the substrate temperature. The thickness of Mo films is measured by Tencor-P1 profiler. The crystal structures are analyzed using X-ray diffraction (XRD: X'Pert MPD PRO / Philips). The resistivity of Mo thin films was measured by Hall effect measurement system (HMS-3000/0.55T). The surface morphology and grain shape of the films were examined by field emission scanning electron microscopy (FESEM: Hitachi S-4300). The chemical composition of the films was obtained by the energy dispersive X-ray spectroscopy (EDX). Finally the optimum substrate temperature as well as deposition conditions for Mo thin films will be developed.

• 한국표면공학회지
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• 제48권1호
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• pp.23-26
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• 2015

What causes the transformation of a solar cell is the behavior difference of thermal expansion occurred between the substrate and the layer of semiconductor used in the solar cell. Therefore, the substrate has to possess a behavior of thermal expansion that is similar with that of semiconductor layer. This study employed electroforming to manufacture Fe-Ni alloy materials of different compositions. To verify the result from a finite element analysis, a two-dimensional Mo substrate was calculated and its verification experiment was conducted. The absolute values from the finite element analysis of Mo/substrate structure and its verification experiment showed a difference. However, the size of residual stress of individual substrate compositions had a similar tendency. Two-dimensional CIGS/Mo/$SiO_2$/substrate was modeled. Looking into the residual stress of CIGS layer occurred while the temperature declined from $550^{\circ}C$ to room temperature, the smallest residual stress was found with the use of Fe-52 wt%Ni substrate material.

• Tribology and Lubricants
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• 제16권3호
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• pp.223-230
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• 2000

Molybdenum dialkyl dithiophosphate(MoDTP) 마찰특성을 이원통 마찰시험기에 의한 마찰실험 및 X-선광전자분광분석기를 이용하여 마찰표면을 분석함으로써 MoDTP의 마찰감소 작용에 대해 고찰하였다 MoDTP의 마찰감소작용은 마찰표면에 생성하는 MoS$_2$에 의존하였다. 몰리브덴(Mo)이 용이하게 금속내부로 확산하는 질소분위기 중에서는 MoDTP의 마찰감소 특성은 나타나지 않았으며, 금속표면에 산화피막이 존재할 때 MoDTP의 마찰감소작용이 잘 나타남을 알 수 있었다

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.110-113
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• 2017

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.

• 한국생물물리학회:학술대회논문집
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• 한국생물물리학회 2002년도 제9회 학술 발표회 프로그램과 논문초록
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• pp.18-18
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• 2002

Nitrogenase, comprised of the MoFe and Fe proteins, catalyzes the reduction of dinitrogen to ammonia at ambient temperature and pressure. The MoFe protein contains two metal centers, the P-cluster (Fe8S7-8) and the FeMo-cofactor (Fe7S9：homocitrate), the substrate binding site. Despite the availability of the crystal structure of the MoFe protein, suprisingly little is known about the molecular details of catalysis at the active site, and no small-molecule substrate or inhibitor had ever been shown to directly interact with a protein-bound cluster of the functioning enzyme, until our electron-nuclear double resonance(ENDOR) study of CO-inhibited nitrogenase.(omitted)

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.46-46
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• 1988

Structural and magnetic properties of Co-Cr-Mo films were investigated in connection with sputtering conditions. Films were prepared using a convention RF sputtering system. X-ray diffractometry, scanning electron microscopy and transmission electron microscopy were employed to investigate structure properties. Vibrating sample magnetometry was used for coercivity and saturation magnetization measurements. Co-Cr-Mo films displayed reasonable values of perpendicular coercivity and saturation magnetization for perpendicular recording media and showed good perpendicular orientation of the hcp c-axis to the film surface. Perpendicular coercivity was strongly dependent upon substrate technique showed better c-axis orientation than hose using the stationary substrate. Co-Cr-Mo films of 2.9 at. % Mo content showed maximum perpendicular coercivity and saturation magnetization. The films deposited at lower Ar pressure showed good magnetic properties. There was no explicit relationship between the columnar structure and c-axis orientation. Co-Cr-Mo films was found to have suitable structural and magnetic properties for perpendicular recording media.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.523-525
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• 2002

The poly-Si thin film can be used in high mobility active matrix liquid-crystal display (AMLCD) and system on panel (SOP). In this paper, poly-Si thin films were grown by novel high temperature process on the molybdenum (Mo) substrate. By applying a high current above 48A on a Mo substrate. We obtained an improved crystalline Si films with the crystallinity over 80%. We exhibit the properties of structural and electrical properties of high temperature poly-Si thin film transistor on the Mo substrates.