• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.10
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• pp.1061-1070
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• 2009

In this paper, we have designed TDL(True-time Delay Line) for eliminating beam-squint occurring in active phased array antenna with large electrical size operated in wide bandwidth, and have tested its electrical performance. The proposed TDL device is composed of 4-bit microstrip delay line structure and MMIC amplifier for compensation of the delay-line loss. The measured results of gain and phase versus delay state satisfy the electrical requirements, also P1dB output power and noise figure meet the requirement. To verify the performance of fabricated TDL, we have simulated the beam patterns of wide-band active phased array antenna using the measured results and have certified the beam pattern compensation performance. As a result of simulated beam pattern compensation with respect to the 675.8 mm size antenna which is operated in X-band, 800 MHz bandwidth, we have reduced the beam squint error of ${\pm}1^{\circ}$ with ${\pm}0.1^{\circ}$. So this TDL module is able to be applied to active phase array antenna system.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.111-115
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• 2001

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.4
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• pp.849-858
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• 1999

There are several improved designs of passive radar reflector available, but their performance is ultimately limited by the cross-section area and this is governed by the size of the buoy and the acceptable windage. Therefore it is needed to investigate the low-cost, low power, a active device that can be improve the reliability of response. Active Radar Reflector(AAR) consists of a microwave amplifier with separate receive and transmit antennas. It is a device which automatically transmits a signal in response to an interrogating signal received. It was intended to improve the consistency of the radar return from the buoy and the small craft, particularly in poor sea conditions. And it directly improves safety of navigation at sea.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.113-119
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• 2005

4H-SiC planar MESFETs were fabricated using ion-implantation on semi-insulating substrate without recess gate etching. A modified RCA method was used to clean the substrate before each procedure. A thin, thermal oxide layer was grown to passivate the surface and then a thick field oxide was deposited by CVD. The fabricated MESFET showed good contact properties and DC/RF performances. The maximum oscillation frequency of 34 GHz and the cut-off frequency of 9.3 GHz were obtained. The power gain was 10.1 dB and the output power of 1.4 W was obtained for 1 mm-gate length device at 2 GHz. The fabricated MESFETs showed the charge trapping-free characteristics and were characterized by the extracted small-signal equivalent circuit parameters.

• Progress in Superconductivity and Cryogenics
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• v.21 no.1
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• pp.10-14
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• 2019

Radio-frequency (RF) amplifiers based on direct current (DC) superconducting quantum interference device (SQUID) have low-noise performance for precision physics experiments. Gain curves of SQUID RF amplifiers depend on several parameters of the SQUID and operation conditions. We are developing SQUID RF amplifiers for application to measure very weak RF signals from ultra-low-temperature high-magnetic-field microwave cavity in axion search experiments. In this study, we designed, fabricated and characterized SQUID RF amplifiers with different SQUID parameters, such as number of input coil turn, shunt resistance value of the junction and coupling capacitance in the input coil, and compared the results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.11
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• pp.2301-2306
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• 2011

Current general-purpose electromagnetic field simulators have been widespread applied, and is being used to electromagnetic problems such as antenna design, EMC design, measurement, and microwave device design, etc. This paper is to solve various electromagnetic problems in X-band region for utilizing multi-core-based PC available network resources more efficiently. The electromagnetic field simulator based on TCP / IP-based network topology, configuration, and its framework design is proposed and its availability is examined.

• 전기의세계
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• v.27 no.4
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• pp.45-51
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• 1978

A new method of realizing the field effect transistor with a sub-.mu. channel width is described. The sub-.mu. channel width is made possible by etching grooves into n$^{+}$ pn$^{[-10]}$ n$^{[-10]}$ structure and using p region at the wall for the channel region of the Metal-Oxide-Semiconductor transistor (MOST), or by diffusing two different types of impurities through the same diffusion mask and using p region at the surface for the channel region of MOST. When the drain voltage is increased at the pn$^{[-10]}$ drainjunction the depletion layer extends into the n$^{[-10]}$ region instead of into p region; this is also the secret of success to realize the sub-.mu. channel width. As the result of the experimental fabrication, a microwave MOST was obtained. The cut-off frequency was calculated to be 15.4 GHz by Linvill's power equation using the measured capacitances and transconductance.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2005.11a
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• pp.421-424
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• 2005

X-ray is currently most effective method in detecting small malignant breast tumors but has the several problems due to suppressing breast, ionizing radiation and not detecting small cancer. In this paper, a new method is proposed by using dielectric characteristics of pathological tissues and time delay of backscattered response. We have developed a detection algorithm and verified it by numerical simulation and measurement for a prototype system. For a prototype system, we have fabricated experimental model(artificial breast with a cancer) and UWB(ultra-wideband) antenna. The results of the measurement simulation show an excellent detection capability of a cancer tissue. It is found that a good UWB antenna is a key element of such detection system. Further study is ongoing to develop a commercial system.