Electronics and Telecommunications Trends (전자통신동향분석)

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication

5G 이동통신을 위한 GaN RF 전자소자 및 집적회로 기술 동향

  • Published : 2021.06.01
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Abstract

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

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Acknowledgement

본 논문은 과학기술정보통신부의 재원으로 정보통신기술진흥센터[과제번호: B0132-15-1006, Development of High Efficiency GaN-based Key Components and Modules for Base and Mobile Stations], 정보통신기획평가원[과제번호: 2019-0-00068, 미세공정 화합물 반도체 기반 밀리미터파 대역 5G 부품기술 개발] 지원을 받아 수행된 연구임.

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