JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication and Characterization of $0.2\mu\textrm{m}$ InAlAs/InGaAs Metamorphic HEMT's with Inverse Step-Graded InAlAs Buffer on GaAs Substrate

  • Kim, Dae-Hyun (School of Electrical Engineering & Computer Science, Seoul National University) ;
  • Kim, Sung-Won (School of Electrical Engineering & Computer Science, Seoul National University) ;
  • Hong, Seong-Chul (School of Electrical Engineering & Computer Science, Seoul National University) ;
  • Paek, Seung-Won (School of Electrical Engineering & Computer Science, Seoul National University) ;
  • Lee, Jae-Hak (School of Electrical Engineering & Computer Science, Seoul National University) ;
  • Chung, Ki-Woong (School of Electrical Engineering & Computer Science, Seoul National University) ;
  • Seo, Kwang-Seok (School of Electrical Engineering & Computer Science, Seoul National University)
  • Published : 2001.06.01
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Abstract

Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strain-relaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content. The fabricated metamorphic HEMT with $0.2\mu\textrm{m}$T-gate and 40% indium content shows the excellent DC and microwave characteristics of $V_{th}-0.65V,{\;}g_{m,max}=620{\;}mS/mm,{\;}f_T120GHZ{\;}and{\;}f_{max}=210GHZ$.

Keywords

References

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