• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.172-174
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• 1988

Studies and measurements of open circuit voltage in a metal/insulator/metal structure where metal are electrodes, when the insulator molecules have dipole moments all oriented parallel to each other have been reported here. The measured voltage has been shown to be directed related to the dipole moment of the molecules in the films. The insulator ultra thin films was deposited on them by the Langmuir-Blodgett technique to obtain the structure referred to as z type and Hetero structure of LB films.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.147-152
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• 2016

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

• 한국전자파학회논문지
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• 제14권6호
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• pp.648-654
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• 2003

본 논문에서는 비 산화물인 불소화합물 게이트절면막을 이용하여 박막반도체 다이아몬드 MS계면(Metal-Insulator-Semiconductor Interface)의 전기적 안정화를 실현하였다. 특히 산소 게터링 효과(Oxygen-Gettering Effect)에 의한 표면준위 억제를 통해, 박막반도체 다이아몬드 MIS계면에 있어서 최적의 전기적 특성을 부여하는 BiF2 게이트절연막을 개발하였다. 본 논문의 결과에 의하면, BaF$_2$ 게이트 절연막을 이용하여 제작한 A1/BaF2/diamond MIS 다이오드와 MISFET(Metal-Insulator-Semiconductor Field Effect Transistor)로부터 저농도의 ~10101/$\textrm{cm}^2$ eV의 표면준위밀도가 관측되었고, 그리고 이제까지 발표된 다이아몬드 박막반도_체 FET중 최고치인 400 $\textrm{cm}^2$/Vs의 유효이동도가 관찰되었다.

• Bulletin of the Korean Chemical Society
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• 제25권7호
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• pp.959-964
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• 2004

A low-dimensional metal frequently exhibits a metal-insulator transition through a charge-density-wave (CDW) or a spin-density-wave (SDW) which accompany it's structural changes. The transition temperature is thought to be determined by the amount of energy produced during the transition process and the softness of the original structure. $AMo_4O_6$ (A=K, Sn) are known to be quasi-one dimensional metals which exhibit metalinsulator transitions. The difference of the transition temperatures between $KMo_4O_6$ and $SnMo_4O_6$ (A=K, Sn) is examined by investigating their electronic and structural properties. Fermi surface nesting area and the lattice softness are the governing factors to determine the metal-insulator transition temperature in $AMo_4O_6$ compounds.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2015년도 임시총회 및 하계학술연구발표회
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• pp.139-139
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• 2015

• 한국재료학회:학술대회논문집
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• 한국재료학회 2000년도 추계학술발표강연 및 논문개요집
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• pp.39-39
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• 2000

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.19.2-19.2
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• 2011

The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

• Bulletin of the Korean Chemical Society
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• 제17권1호
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• pp.43-45
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• 1996

Structural and electronic properties of an alkali metal fulleride, Rb1C60, was studied. In spite of the chain structure with shortdistance between balls along the crystallographic a-direction, the electronic structure calculation study with the X-ray defined crystal structure shows that Rb1C60 is a three-dimensional metal at room temperature. This result is different from the magnetic experiments in which the compound was found to behave as a quasi-one-dimensional metal. Partial Fermi surface nesting is supposed to be the reason for the metal-insulator transition found in Rb1C60 at ∼50 K.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.533-538
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• 2001

The barrier height is found to increase from 0.25 to 0.690 eV for Schottky contacts on n-InGaAs using deposition of Ag on a substrate cooled to 77K(LT). Surface analysis leads to an interface model for the LT diode in which there are oxide compounds of In:O and As:O between the metal and semiconductor, leading to behavior as a metal-insulator-semiconductor diode. The metal film deposited t LT has a finer and more uniform structure, as revealed by scanning electron microscopy and in situ metal layer resistance measurement. This increased uniformity is an additional reason for the barrier height improvement. In contrast, the diodes formed at room temperature exhibit poorer performance due to an unpassivated surface and non-uniform metal coverage on a microscopic level.

• 한국전자파학회논문지
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• 제29권2호
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• pp.77-82
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• 2018

테라헤르츠 영역에서 MIM(Metal - Insulator - Metal) 도파관이 주기적으로 배열되어 있는 경우, 도파관 두께의 변화에 따른 전자파의 투과 특성은 널리 연구되지 않았다. 본 논문에서는 금속이 금으로 구성된 주기 구조의 경우 MIM 도파관에 수직으로 입사하는 수평 편파에 의한 전자파의 투과 특성을 다양한 테라헤르츠 주파수 영역에서 확인하고, 그 결과를 분석하고자 한다. 또한 완전 도체의 경우와 비교해 봄으로써 그 차이점을 확인한다.