JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

  • Kim, Sungjun (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University) ;
  • Cho, Seongjae (Department of Electronic Engineering, Gachon University) ;
  • Park, Byung-Gook (Department of Electrical and Computer Engineering and the Interuniversity Semiconductor Research Center (ISRC), Seoul National University)
  • Received : 2015.07.22
  • Accepted : 2015.10.05
  • Published : 2016.04.30
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Abstract

In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

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References

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