Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural Analysis of Low Temperature Processed Schottky Contacts to n-InGaAs

저온공정 n-InGaAs Schottky 접합의 구조적 특성

  • 이홍주 (상명대학교 컴퓨터정보통신공학부)
  • Published : 2001.07.01
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Abstract

The barrier height is found to increase from 0.25 to 0.690 eV for Schottky contacts on n-InGaAs using deposition of Ag on a substrate cooled to 77K(LT). Surface analysis leads to an interface model for the LT diode in which there are oxide compounds of In:O and As:O between the metal and semiconductor, leading to behavior as a metal-insulator-semiconductor diode. The metal film deposited t LT has a finer and more uniform structure, as revealed by scanning electron microscopy and in situ metal layer resistance measurement. This increased uniformity is an additional reason for the barrier height improvement. In contrast, the diodes formed at room temperature exhibit poorer performance due to an unpassivated surface and non-uniform metal coverage on a microscopic level.

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References

  1. Appl. Phys. Lett. v.63 Barrier Height Enhancement of Schottky Diodes on n-InGaAs by Cryogenic Processing H. J. Lee;A. Anderson;H. Hardtdegen;H. Luth
  2. Solid-St. Electron. v.37 Temperature Dependence of the Electrical Characteristics of $Ag/In_{0.53}Ga_{0.47}As$ Diodes Formed at Low Temperature H. J. Lee;W. Palmer;W. A. Anderson
  3. J. Vac. Sci. Technol. B6 W. E. Spicer;Z. Lilienthal-Weber;E. Weber;N. Newman;T. Kendelewicz;R. Cao;C. McCants;P. Mathowald;K. Myano;I. Lindau
  4. J. Vac. Sci. Technol. v.B11 Schottky Barrier Height-Do We Really Understand What We Measure R. T. Tung
  5. Solid-St. Electron. v.36 Metal/n-InP Interfaces Studied by Photoreflectance And Raman Spectroscopies Z. Q. Shi;W. A. Anderson;L. P. Fu;A. Petrou
  6. Phys. Rev. B. v.38 Internal-stress Effects on Raman Spectra of $In_xGa_{1-x}As$ on InP S. Emura;S. Gonda;Y. Matsui;H. Hayashi
  7. J. Appl. Phys. v.70 Roman Scattering Study of Thermal Interdiffusion in InGaAs/InP Superlattice Structures S. J. Yu;H. Asahi;S. Emura;S. Gonda;K. Nakashima
  8. J. Vax. Sci. Technol. v.16 Raman Scattering Studies of Surface Space Charge Layers And Schottky Barrier Formation In InP A. Pinczuk;A. A. Ballman;R. E. Nahory;M. A. Pollack;J. M. Worlock
  9. J. Appl. Phys. v.70 Improved Surface Properties of InP through Chemical Treatments T. K. Paul;D. N. Bose
  10. Appl. Phys. Lett. v.63 GaAs Surface Passivation by Dposition of An Ultrathin InP-related Layer Y. Wada;K. Wada
  11. Europhys. Lett. v.3 XPS Study of The Chemcal Cleaning of Epitaxial $Ga_{0.47}In_{0.53}As(100)$ Surfaces J. P. Landesman;P. Friedel;M. Taillepied
  12. J. Appl. Phys. v.74 On The Relationship Between Interfacial Defects And Schottky Barrier Height in Ag, Au, And Al/n-GaAs Contacts R. van del Walle;R. L. Van Meirhaeghe;W. H. Lafl？e;F. Cardon
  13. Appl. Phys. Lett. v.59 High-barrier Height Schottky Diodes in n-InP by Depisition on Cooled Substrates Z. Q. Shi;R. L. Wallace;W. A. Anderson