• 한국전기전자재료학회논문지
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• 제26권4호
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• pp.271-274
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• 2013

Power Metal Oxide Semiconductor Field Effect Transistor's (MOSFETs) are well known for superior switching speed, and they require very little gate drive power because of the insulated gate. In these respects, power MOSFETs approach the characteristics of an "ideal switch". The main drawback is on-resistance RDS(on) and its strong positive temperature coefficient. While this process has been driven by market place competition with operating parameters determined by products, manufacturing technology innovations that have not necessarily followed such a consistent path have enabled it. This treatise briefly examines metal oxide semiconductor (MOS) device characteristics and elucidates important future issues which semiconductor technologists face as they attempt to continue the rate of progress to the identified terminus of the technology shrink path in about 2020. We could find at the electrical property as variation p base dose. Ultimately, its ON state voltage drop was enhanced also shrink chip size. To obtain an optimized parameter and design, we have simulated over 500 V Field ring using 8 Field rings. Field ring width was $3{\mu}m$ and P base dose was $1e15cm^2$. Also the numerical multiple $2.52cm^2$ was obtained which indicates the doping limit of the original device. We have simulated diffusion condition was split from $1,150^{\circ}C$ to $1,200^{\circ}C$. And then $1,150^{\circ}C$ diffusion time was best condition for break down voltage.

• 융합정보논문지
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• 제8권5호
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• pp.95-100
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• 2018

금속 산화물/그래핀 형태의 복합 나노소재는 높은 전기용량을 갖는 2차 전지의 전극용 소재 또는 고감도 가스 센서의 감지물질 등으로 활용되는 매우 유용한 기능성 소재이다. 본 논문에서는 열 화학기상증착(CVD, Chemical Vapor Deposition)으로 Cu Foil 위에 대면적으로 합성된 CVD 그래핀 및 고정렬 열분해 흑연(HOPG, Highly Oriented Pyrolytic Graphite)으로부터 기계적으로 박리된 그래핀 기판 위에 이산화바나듐($VO_2$) 나노구조물을 기상수송방법으로 직접 성장시키는 연구를 수행하였다. 연구결과 CVD 그래핀 기판의 경우, 그래핀 결정 경계에서 상대적으로 많이 존재하는 기능기들이 $VO_2$ 나노구조물에서 핵형성의 씨앗으로 작용하는 것이 확인되었다. 반면에 HOPG에서 기계적으로 박리된 그래핀 나노시트 표면에는 기능기가 균일하게 분포하기 때문에, 2차원과 3차원 형태로 $VO_2$ 나노구조물이 성장되었다. 이러한 연구결과는 고기능성 $VO_2$/그래핀 나노복합소재를 이용하여 높은 전기용량을 갖는 2차 전지 전극소재 및 고감도 가스 센서의 감지물질 합성에 유용하게 활용될 것으로 전망된다.

• 대한전자공학회논문지
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• 제21권6호
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• pp.34-41
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• 1984

RMOS(refractors metal oxide semiconductor)의 게이트 금속으로 사용되는 Mo2N/Mo 이중층을 N2와 Ar을 혼합하여 저온의 반응성 스펏터링법으로 제조하였다. Ar : N2=95 : 5로 혼합된 가스 분위기에서 반응성 스펏터링을 할 때 Mo2N이 잘 형성되었다. 이렇게 제조한 Mo2N 박막은 면저항이 약 1.20∼1.28Ω/□로서 다결정 실리콘의 1/10정도가 되어 반도체 소자의 동작속도를 크게 향상시킬 것으로 기대된다. 1100℃의 N2분위기에서 PSC(phosphorus silicate glass)를 불순물 확산원으로 하여 소오스와 드레인의 불순물 확산을 할때 Mo2N 박막이 Mo으로 환원되어 확산전의 면저항보다 훨씬 작은 약 0.38Ω/□정도의 면저항을 나타내었다. 본 실험에서 제작한 자기정렬된 RMOSFET의 문턱전압은 약 -1.5V이고 결핍과 증가의 두 가지 동작특성을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.46-49
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• 2005

This paper presents the electrical characteristics of metal oxide varistors for lightning surge arresters. ZnO varistors were fabricated with typical ceramic production methods and two types of varistors were also prepared to be compared. The nominal discharge current and line discharge class of those varistors are $10kA(8/20{\mu}s)$ and class 3, respectively. The diameter of varistors manufactured and prepared were in the range of 61.6~65.0mm and the thickness of those were in the range of 27~42.52mm. The reference and residual voltage were tested and reference and residual voltage per 1mm and the ratio of reference and residual voltage were calculated. The reference voltage per 1mm of varistors manufactured was about 175V/mm but that of A's and B's varistors was nearly 200V/mm. The residual voltage exhibited the same trends as the reference voltage, so the reference and residual voltage per 1mm of domestic varistors should be increased. According to the results of tests, it is thought that if the reference and residual voltage per 1mm were increased to 200V/mm and 330V/mm, domestic ZnO varistors would be possible to apply to the station class arresters in the near future.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.15-23
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• 2002

In this study, metal/ZnO contacts were thermally annealed at different temperatures (as-dep., 400$^{\circ}C$, 600$^{\circ}C$, 800$^{\circ}C$, 1000$^{\circ}C$) for the investigation of electrical properties, and surface and interface characteristics. The analysis of the element composition and the chemical bonding state of the surface was made by the XPS(X-ray photoelectron spectroscopy). An attempt was made to establish the electrical property-microstructure relationship for the (Ti, Au)/ZnO. The Ti/ZnO contact exhibits an ohmic characteristics with a relatively high contact resistance of 4.74${\times}$10$\^$-1/ $\Omega$$\textrm{cm}^2$ after an annealing at 400$^{\circ}C$. The contact showed a schottky characteristics when the samples were annealed at higher temperature than 400$^{\circ}C$. The transition from the ohmic to schottky characteristics was contributed from the formation of the oxide layers as was confirmed by the peaks for O-O and Ti-O bondings in XPS analysis. For the Au/ZnO contact the lowest contact resistance was obtained from the as-deposited sample. The resistance was slowly increased with annealing temperature up to 600$^{\circ}C$. The ohmic characteristics were maintained eden fort 600$^{\circ}C$ annealing. The XPS analysis showed that the Au-O intensity was dramatically decreased with temperature above 600$^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.336-337
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• 2005

ZnO varistor ceramics were fabricated as a function of the amount of $Y_2O_3$ addition and sintered at $1250^{\circ}C$ for 2 hour. The average grain size was decreased from 14.2 ${\mu}m$ to 8.3 ${\mu}m$ with the amount of $Y_2O_3$ addition, and varistor voltage was increased from 433 V to 563 V with $Y_2O_3$ addition. Nonlinear coefficient a of all specimens were increased with the amount of $Y_2O_3$ more than 67, in case of $Y_2O_3$ 0.01wt% addition showed the excellent results of 87. And leakage current was less than $1{\mu}A$ at 82% of varistor voltage. The clamping voltage ratio of the specimens added 0.01wt% $Y_2O_3$ was 1.41 at 25A [8/20${\mu}s$]. At the specimen 0.01wt% $Y_2O_3$ addition. endurance of surge current and deviation of varistor voltage were 5700A/$cm^2$ and $\Delta$-2.86%, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.8-9
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• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• 보존과학회지
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• 제25권4호
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• pp.465-471
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• 2009

본 연구에서는 Methyl Bromide를 대체할 15% Ethylene Oxide + 85% HFC 134a, 20% Ethylene Oxide + 80% $CO_2$, 99% Sulfuryl Fluoride + 1% Inert Gas를 이용하여 훈증처리 시, 금속, 안료, 섬유 및 지류시편에 미치는 영향을 관찰한 실험이다. 15% Ethylene Oxide + 85% HFC 134a을 200g/$m^3$, 48시간 훈증 처리 한 결과 Cu 시편은 1차 및 2차 훈증처리 실험 모두 육안으로 식별할 수 있는 평균 3.40, 4.17의 색차값을 나타났다. 그 외의 시편에서는 색차값이 3.0 미만으로 나타났다. 20% Ethylene Oxide + 80% $CO_2$을 150g/$m^3$, 48시간 처리한 1, 2차 훈증처리 모두 전체적으로 실험군의 색차값이 평균 3.0 미만으로 나타났으며 이는 육안으로 식별할 수 없는 미미한 색차이다. 이에 따라 이 연구에 사용된 재질에 비교적 안정적이라고 판단된다. 99% Sulfuryl Fluoride + 1% Inert Gas로 50g/$m^3$, 48시간 처리한 결과, 안료 중 장단 시편은 1, 2차 훈증처리 시 대조군의 색차값과 비교하여 보았을 때 3.0이상 색차값의 변화가 나타났다. 그 외의 시편에서는 색차값이 평균 3.0 미만으로 나타났다.

• 한국재료학회지
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• 제32권4호
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• pp.200-209
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• 2022

In this study, defects generated in the YSZ coating layer of the IN738LC turbine blade are investigated using an optical microscope and SEM/EDS. The blade YSZ coating layer is composed of a Y-Zr component top coat layer and a Co component bond coat layer. A large amount of Cr/Ni component that diffused from the base is also measured in the bond coat. The blade hot corrosion is concentrated on the surface of the concave part, accompanied by separation of the coating layer due to the concentration of combustion gas collisions here. In the top coating layer of the blade, cracks occur in the vertical and horizontal directions, along with pits in the top coating layer. Combustion gas components such as Na and S are contained inside the pits and cracks, so it is considered that the pits/cracks are caused by the corrosion of the combustion gases. Also, a thermally grown oxide (TGO) layer of several ㎛ thick composed of Al oxide is observed between the top coat and the bond coat, and a similar inner TGO with a thickness of several ㎛ is also observed between the bond coat and the matrix. A PFZ (precipitate free zone) deficient in γ' (Ni₃Al) forms as a band around the TGO, in which the Al component is integrated. Although TGO can resist high temperature corrosion of the top coat, it should also be considered that if its shape is irregular and contains pore defects, it may degrade the blade high temperature creep properties. Compositional and microstructural analysis results for high-temperature corrosion and TGO defects in the blade coating layer used at high temperatures are expected to be applied to sound YSZ coating and blade design technology.