Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2012.02a
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- Pages.71-71
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- 2012
Advanced Low-k Materials for Cu/Low-k Chips
- Choi, Chi-Kyu (Nano Thin Film Materials Laboratory, Department of Physics, Jeju National University)
- Published : 2012.02.08
Abstract
As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional
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