• Title/Summary/Keyword: Memory Access Error

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Radiation-Induced Soft Error Detection Method for High Speed SRAM Instruction Cache (고속 정적 RAM 명령어 캐시를 위한 방사선 소프트오류 검출 기법)

  • Kwon, Soon-Gyu;Choi, Hyun-Suk;Park, Jong-Kang;Kim, Jong-Tae
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.6B
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    • pp.948-953
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    • 2010
  • In this paper, we propose multi-bit soft error detection method which can use an instruction cache of superscalar CPU architecture. Proposed method is applied to high-speed static RAM for instruction cache. Using 1D parity and interleaving, it has less memory overhead and detects more multi-bit errors comparing with other methods. It only detects occurrence of soft errors in static RAM. Error correction is treated like a cache miss situation. When soft errors are occurred, it is detected by 1D parity. Instruction cache just fetch the words from lower-level memory to correct errors. This method can detect multi-bit errors in maximum 4$\times$4 window.

An Experimental 0.8 V 256-kbit SRAM Macro with Boosted Cell Array Scheme

  • Chung, Yeon-Bae;Shim, Sang-Won
    • ETRI Journal
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    • v.29 no.4
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    • pp.457-462
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    • 2007
  • This work presents a low-voltage static random access memory (SRAM) technique based on a dual-boosted cell array. For each read/write cycle, the wordline and cell power node of selected SRAM cells are boosted into two different voltage levels. This technique enhances the read static noise margin to a sufficient level without an increase in cell size. It also improves the SRAM circuit speed due to an increase in the cell read-out current. A 0.18 ${\mu}m$ CMOS 256-kbit SRAM macro is fabricated with the proposed technique, which demonstrates 0.8 V operation with 50 MHz while consuming 65 ${\mu}W$/MHz. It also demonstrates an 87% bit error rate reduction while operating with a 43% higher clock frequency compared with that of conventional SRAM.

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Bit Error Reduction for Holographic Data Storage System Using Subclustering (서브클러스터링을 이용한 홀로그래픽 정보저장 시스템의 비트 에러 보정 기법)

  • Kim, Sang-Hoon;Yang, Hyun-Seok;Park, Young-Pil
    • Transactions of the Society of Information Storage Systems
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    • v.6 no.1
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    • pp.31-36
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    • 2010
  • Data storage related with writing and retrieving requires high storage capacity, fast transfer rate and less access time. Today any data storage system cannot satisfy these conditions, however holographic data storage system can perform faster data transfer rate because it is a page oriented memory system using volume hologram in writing and retrieving data. System can be constructed without mechanical actuating part so fast data transfer rate and high storage capacity about 1Tb/cm3 can be realized. In this research, to correct errors of binary data stored in holographic data storage system, a new method for reduction errors is suggested. First, find cluster centers using subtractive clustering algorithm then reduce intensities of pixels around cluster centers. By using this error reduction method following results are obtained ; the effect of Inter Pixel Interference noise in the holographic data storage system is decreased and the intensity profile of data page becomes uniform therefore the better data storage system can be constructed.

ASIC Design of Frame Sync Algorithm Using Memory for Wireless ATM (무선 ATM망에서 메모리를 이용한 프레임 동기 알고리즘의 ASIC 설계)

  • 황상철;김종원
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.82-85
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    • 1998
  • Because ATM was originally designed for the optical fiber environment with bit error rate(BER) of 10-11, it is difficult to maintain ATM cell extraction capability in wireless environment where BER ranges from 10-6 to 10-3. Therefore, it must be proposed the algorithm of ATM cell extraction in wereless environment. In this paper, the frame structure and synchronization algorithm satisfyling the above condition are explained, and the new ASIC implementation method of this algorithm is proposed. The known method using shift register needs so many gates that it is not suitable for ASIC implementation. But in the proposed method, a considerable reduction in gate count can be achieved by using random access memory.

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A Cache Managing Strategy for Fast Media Data Access (미디어 데이터의 빠른 참조를 위한 캐시 운영 전략)

  • Moon, Hyun-Ju;Kim, Suk-il
    • The KIPS Transactions:PartA
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    • v.11A no.1
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    • pp.11-20
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    • 2004
  • Multimedia data processing in streaming pattern contains high spatial locality and low temporal locality. This paper has proposed a dynamic data prefetching scheme that fully exploits the regularity between memory addresses referred consecutively. Compared to the existing data Prefetching scheme, the Proposed scheme can reduce data Prefetching error when an application divides an way into smaller blocks and processes them block by block. Experimental results on various media benchmark programs show the proposed scheme predicts memory addresses more accurately and results in better performance than existing prefetching schemes.

Understanding radiation effects in SRAM-based field programmable gate arrays for implementing instrumentation and control systems of nuclear power plants

  • Nidhin, T.S.;Bhattacharyya, Anindya;Behera, R.P.;Jayanthi, T.;Velusamy, K.
    • Nuclear Engineering and Technology
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    • v.49 no.8
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    • pp.1589-1599
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    • 2017
  • Field programmable gate arrays (FPGAs) are getting more attention in safety-related and safety-critical application development of nuclear power plant instrumentation and control systems. The high logic density and advancements in architectural features make static random access memory (SRAM)-based FPGAs suitable for complex design implementations. Devices deployed in the nuclear environment face radiation particle strike that causes transient and permanent failures. The major reasons for failures are total ionization dose effects, displacement damage dose effects, and single event effects. Different from the case of space applications, soft errors are the major concern in terrestrial applications. In this article, a review of radiation effects on FPGAs is presented, especially soft errors in SRAM-based FPGAs. Single event upset (SEU) shows a high probability of error in the dependable application development in FPGAs. This survey covers the main sources of radiation and its effects on FPGAs, with emphasis on SEUs as well as on the measurement of radiation upset sensitivity and irradiation experimental results at various facilities. This article also presents a comparison between the major SEU mitigation techniques in the configuration memory and user logics of SRAM-based FPGAs.

Generation of Error corrector for Holographic Data Storage system Used The Extended Kalman filter (확장 칼만필터를 이용한 홀로그래픽 에러 보정 알고리즘)

  • Kim Janghyun;Yang Hyunseok;Park Jinbae;Park Youngpil
    • 정보저장시스템학회:학술대회논문집
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    • 2005.10a
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    • pp.44-46
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    • 2005
  • Data storage related with writing and retrieving requires high storage capacity, fast transfer rate and less access time. Today any data storage system cannot satisfy these conditions, however holographic data storage system can perform faster data transfer rate because it is a page oriented memory system using volume hologram in writing and retrieving data. System can be constructed without mechanical actuating part therefore fast data transfer rate and high storage capacity about $1Tb/cm^3$ can be realized. In this paper, to reduce errors of binary data stored in holographic data storage system, a new method for bit error reduction is suggested. We proposal Algorithm use The Extended Kalman filter. The Kalman filter reduce measurement noise. Therefore, By using this error reduction method following results are obtained; the effect of measurement nois of Pixel is decreased and the intensity profile of data page becomes uniform therefore the better data storage system can be constructed.

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Design error corrector of binary data in holographic dnta storage system using fuzzy rules (근접 픽셀 에러 감소를 위한 홀로그래픽 데이터 스토리지 시스템의 퍼지 규칙 생성)

  • Kim Jang-hyun;Kim Sang-hoon;Yang Hyun-seok;Park Jin-bae;Park Young-Pil
    • 정보저장시스템학회:학술대회논문집
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    • 2005.10a
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    • pp.129-133
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    • 2005
  • Data storage related with writing and retrieving requires high storage capacity, fast transfer rate and less access time. Today any data storage system cannot satisfy these conditions, however holographic data storage system can perform faster data transfer rate because it is a page oriented memory system using volume hologram in writing and retrieving data. System can be constructed without mechanical actuating part therefore fast data transfer rate and high storage capacity about $1Tb/cm^3$ can be realized. In this paper, to reduce errors of binary data stored in holographic data storage system, a new method for bit error reduction is suggested. First, find cluster centers using subtractive clustering algorithm then reduce intensities of pixels around cluster centers and fuzzy rules. Therefore, By using this error reduction method following results are obtained ; the effect of Inter Pixel Interference noise is decreased and the intensity profile of data page becomes uniform therefore the better data storage system can be constructed.

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Reliability on Accelerated Soft Error Rate in Static RAM of Thin Film Transistor Type (소프트 에러율에 대한 박막 트랜지스터형 정적 RAM의 신뢰성)

  • Kim Do-Woo;Wang Jin-Suk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.6
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    • pp.507-511
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    • 2006
  • We investigated accelerated soft error rate (ASER) in static random access memory (SRAM) cells of thin film transistor (TFT) type. The effects on ASER by cell density, buried nwell structure, operational voltage, and polysilicon-2 layer thickness were examined. The increase in the operational voltage, and the decrease in the density of SRAM cells, respectively, resulted in the decrease of ASER values. The SRAM chips with buried nwell showed lower ASER than those with normal well structure did. The ASER decreased as the test distance from alpha source to the sample increased from $7{\mu}m\;to\;15{\mu}m$. As the polysilicon-2 thickness increased up to $1000\;{\AA}$, the ASER decreased exponentially. In conclusion, the best condition for low soft error rate, which is essential to obtain highly reliable SRAM device, is to apply the buried nwell structure scheme and to fabricate thin film transistors with the thick polysilicon-2 layer

Design of a Correlator and an Access-code Generator for Bluetooth Baseband (블루투스 기저대역을 위한 상관기와 액세스 코드 생성 모듈의 설계)

  • Hwang Sun-Won;Lee Sang-Hoon;Shin Wee-Jae
    • Journal of the Institute of Convergence Signal Processing
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    • v.6 no.4
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    • pp.206-211
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    • 2005
  • We describe the design for a correlator and an access code generator in bluetooth system. These are used for a connection setting, a packet decision and a clock synchronization between Bluetooth units. The correlator consists of two blocks; carry save adder based on Wallace tree and threshold-value decision block. It determines on an useful packet and clock-synchronization for input signal of 1.0Mbps through the sliding-window correlating. The access-code generator also consists of two blocks; BCH(Bose-Chadhuri-Hocquenghem) cyclic encoder and control block. It generates the access-codes according to four steps' generation process based on Bluetooth standard. In order to solve synchronization problem, we make use of any memory as a pseudo random sequence. The proposed correlator and access-code generator were coded with VHDL. An FPGA Implementation of these modules and the simulation results are proved by Xilinx chip. The critical delay and correlative margin based on synthesis show the 4.689ns and the allowable correlation-error up to 7-bit.

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