Proceedings of the Korean Vacuum Society Conference
/
2014.02a
/
pp.362-362
/
2014
Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.
Park, Jun-Woong;Kim, Ik-Soo;Shim, Sun-Il;Youm, Min-Soo;Kim, Yong-Tae;Sung, Man-Young
Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
/
2003.07a
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pp.319-322
/
2003
To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.
Most vendors of digital signal processors (DSPs) support a Harvard architecture, which has two or more memory buses, one for program and one or more for data and allow the processor to access multiple words of data from memory in a single instruction cycle. We already addressed how to efficiently assign data to multi-memory banks in our previous work. This paper reports on our recent attempt to optimize run-time memory. The run-time environment for dual data memory banks (DBMBs) requires two run-time stacks to control activation records located in two memory banks corresponding to calling procedures. However, activation records of two memory banks for a procedure are able to have different size. As a consequence, dual run-time stacks can be unbalanced whenever a procedure is called. This unbalance between two memory banks causes that usage of one memory bank can exceed the extent of on-chip memory area although there is free area in the other memory bank. We attempt balancing dual run-time slacks to enhance efficiently utilization of on-chip memory in this paper. The experimental results have revealed that although our algorithm is relatively quite simple, it still can utilize run-time memories efficiently; thus enabling our compiler to run extremely fast, yet minimizing the usage of un-time memory in the target code.
The purpose of this study is to explore children's reactions in the process of reading books dealing with death. As a result, there was a reflection of their religious assumptions. The participants interpreted the stories based on their belief systems. If the stories did not match with their assumptions, they used another strategy. Also, it is indicated that they recalled death-related memories and applied those stories to their own loss experiences and social events. Furthermore, they recognized the importance of their own everyday lives rather than immersing in death itself. It means that death-related stories help the participants express their passion towards life and resolve to live their lives to the utmost. Contrary to their first drawings before reading books, their second drawings contained the joy of living and reflected the details of death they developed while reading books. Also, the colors they used in their second drawings were brighter than the previous ones. Their passionate attitude towards life above was equally shown in their poems as well. In conclusion, reading death stories turned out to be a process in which children develop and reflect on their understanding of death. Abundant opportunities to express their own feelings are offered. Furthermore, it is showed that death stories can help the children love their lives and provide a strong will for their living sincerely. Based on the results, some educational suggestions were provided.
Purpose - In urban regeneration projects, considerations for rejuvenating traditional public markets are becoming increasingly important. That is because the traditional market is not just a commercial space but also a living center for local people's existence. Cultural contents like these are invaluable assets in the contemporary economy. However, traditional markets are gradually declining because of changes in distribution systems and consumer lifestyles. New distribution systems such as modern distribution markets, home shopping, and online shopping malls made traditional markets less competitive. Further, traditional markets have not been able to adapt to the changing consumption styles of younger generations. Some say that it is a natural phenomenon that cannot be stopped. However, traditional markets are not just another distribution system but also a valuable resource that encapsulates the local people's tradition and history. Thus, a revitalization strategy for traditional public markets has become an urgent task in contemporary urban regeneration projects. This study aimed to find ways to activate traditional public markets by making it a community landmark based on visual merchandising perspectives. Research design and methodology - This study focused on analyzing Granville Island (Vancouver, Canada) as a role-model project for rejuvenating the traditional market. It investigated Granville Island both with walk-through evaluation and literature reviews. Results - We found that it has been developed not only to improve visual aspects, but also to promote cultural contents with high value added. For example, the developers maintained the visual elements that tell the original history of the site as an industrial factory. The renewal project had a balance between improving the outer look and creating attractive contents. The following are the merits of Granville Island that Korean traditional markets should note. First, they kept the whole area clean and hygienic. Second, merchants are well educated, business-savvy, and consumer-oriented. Third, the area's total environmental designs were done by professionals of a high caliber. Fourth, the city government and the merchants'association were collaborating well in their efforts to accommodate the changing needs of consumers. Conclusions - This study made the following suggestions as a conclusion. First, it will be a very powerful tool to rejuvenate the traditional market if we can discover unique cultural resources and develop them as cultural products, experiences, and events. Consumers of the 21st century have a strong tendency to consume not only material products, but also the experiences and memories attached to them. Second, in order to maintain the unique characteristics of traditional markets, fostering the viability of the merchants' association and local residents' society would be essential. Third, it is necessary to make the traditional market into a cultural place not only for the shopping patronage of local residents, but also for attracting tourists to increase sales. Finally, professional management and design approaches are needed in order to make the traditional market a pleasant space from a visual merchandising standpoint.
Proceedings of the Korean Vacuum Society Conference
/
2011.08a
/
pp.120-120
/
2011
Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.
Journal of the Korea Society of Computer and Information
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v.20
no.6
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pp.1-11
/
2015
Recently, NAND flash memories are used for storage devices because of fast access speed and low-power. However, applications of FTL on low power computing devices lead to heavy workloads which result in a memory requirement and an implementation overhead. Consequently, studies of B+-Tree on embedded devices without the FTL have been proposed. The studies of B+-Tree are optimized for performance of inserting and updating records, considering to disadvantages of the NAND flash memory that it can not support in-place update. However, if a general garbage collection method is applied to the previous studies of B+-Tree, a performance of the B+-Tree is reduced, because it generates a rearrangement of the B+-Tree by changing of page positions on the NAND flash memory. Therefor, we propose a novel garbage collection method which can apply to the B+-Tree based on the NAND flash memory without the FTL. The proposed garbage collection method does not generate a rearrangement of the B+-Tree by using a block information table and a proxy block. We implemented the B+-Tree and ${\mu}$-Tree with the proposed garbage collection on physical devices with the NAND flash memory. In experiment results, the proposed garbage collection scheme compared to greedy algorithm garbage collection scheme increased the number of inserted keys by up to about 73% on B+-Tree and decreased elapsed time of garbage collection by up to about 39% on ${\mu}$-Tree.
The fandom phenomenon of political emotion originated from ideological conflicts between the conservative and the progressive amplifies social conflicts in South Korea in interpreting and accepting films as culture media. The purpose of this paper is to examine why the structure of political consciousness in South Korea is fandomized, what is the acceptance of cinema at the center of the controversy of political ideology, and what is the desirable attitude of film reception. I conducted a discourse analysis that closely examined the debates and articles on the internet regarding ,(2013) and ,(2014) which were controversial in terms of conservatism and progressivism. As a result, First, while Korean society has not constituted a consensus on modern and contemporary history, it has easily led the acceptance of cinema to the controversy surrounding the political ideology. Second, the failure of constructing consensual memories of modern and contemporary history has made the conservative and the progressive not acknowledge the other's achievements. Third, film interpretation and meaning production are ultimately the roles of the audience, and on interpretation, diversity should be respected but conformity would be rejected. Film acceptance and interpretation should focus on rational awareness of social reality and would reflect on the social ideal objectively.
Since Kim Dae-jung's administration, the Korean government has established policy for overseas Koreans to provide nationalism education to their descendants. While the policy is still in effect today, as to how the recipients of the support in the USA make meaning of the programs given much changes in the social climate in respect to Korean culture, has not been examined in-depth. Therefore, through in-depth interviews with Korean Americans, the current study examined how the recipients of the educational program perceive policy on education program towards Korean Americans and whether it has strengthened their nationalism or sentiment towards motherland. The study further examines the factors that influences their sentiments towards the motherland as identified by Korean Americans. The findings show that exposure to the culture and parents' teachings of the Korean values have helped them embrace Korean heritage. Moreover, findings revealed that their sense of Koreanness were due to positive memories from visits they had when they were young and changes in Korea's status in the global arena. Future direction of the policy and suggestion for specific programs for Korean Americans, as well as implications of the findings are discussed.
Journal of the Institute of Electronics Engineers of Korea TC
/
v.47
no.10
/
pp.36-42
/
2010
FFT(Fast Fourier Transform) processor is one of the key components in the implementation of OFDM systems for many wireless standards such as IEEE 802.22. To improve the performances of FFT processors, various studies have been carried out to reduce the complexities of multipliers, memory interface, control schemes and so on. While the number of FFT stages increases logarithmically $log_2N$) as the FFT point-size (N) increases, the number of required registers (or, memories) increases linearly. In large point-size FFT designs, the registers occupy more than 70% of the chip area. In this paper, to reduce the memory size of IFFT for OFDM transmitters, we propose a new IFFT design method based on a combined mapping of modulated data, pilot and null signals. The proposed method focuses on reducing the sizes of the registers in the first two stages of the IFFT architectures since the first two stages require 75% of the total registers. By simulations of 2048-point IFFT design for cognitive radio systems, it is shown that the proposed IFFT design method achieves more than 38.5% area reduction compared with previous IFFT designs.
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