• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.9 no.1
• /
• pp.120-131
• /
• 2016

In this paper, a 512b MTP memory IP is designed by using MTP memory cells which are written by the FN (Fowler-Nordheim) tunneling method with only MV (medium voltage) devices of 5V which uses the back-gate bias, that is VNN (negative voltage). The used MTP cell consists of a CG (control gate) capacitor, a TG (tunnel gate) transistor, and a select transistor. To reduce the size of the MTP memory cell, just two PWs (P-wells) are used: one for the TG and the select transistors; and the other for the CG capacitor. In addition, just one DNW (deep N-well) is used for the entire 512b memory cell array. VPP and VNN generators supplying pumping voltages of ${\pm}8V$ which are insensitive to PVT variations since VPP and VNN level detectors are designed by a regulated voltage, V1V (=1V), provided by a BGR voltage generator.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.13 no.1
• /
• pp.48-57
• /
• 2020

MCU used in applications such as wireless chargers and USB type-C require MTP memory with a small cell size and a small additional process mask. Conventional double poly EEPROM cells are small in size, but additional processing masks of about 3 to 5 sheets are required, and FN tunneling type single poly EEPROM cells have a large cell size. In this paper, a 110nm MTP cell using a vertical PIP capacitor is proposed. The erase operation of the proposed MTP cell uses FN tunneling between FG and EG, and the program operation uses CHEI injection method, which reduces the MTP cell size to 1.09㎛2 by sharing the PW of the MTP cell array. Meanwhile, MTP memory IP required for applications such as USB type-C needs to operate over a wide voltage range of 2.5V to 5.5V. However, the pumping current of the VPP charge pump is the lowest when the VCC voltage is the minimum 2.5V, while the ripple voltage is large when the VCC voltage is 5.5V. Therefore, in this paper, the VPP ripple voltage is reduced to within 0.19V through SPICE simulation because the pumping current is suppressed to 474.6㎂ even when VCC is increased by controlling the number of charge pumps turned on by using the VCC detector circuit.

• ETRI Journal
• /
• v.37 no.6
• /
• pp.1188-1198
• /
• 2015

In this paper, a multi-time programmable (MTP) cell based on a $0.18{\mu}m$ bipolar-CMOS-DMOS backbone process that can be written into by using dual pumping voltages - VPP (boosted voltage) and VNN (negative voltage) - is used to design MTP memories without high voltage devices. The used MTP cell consists of a control gate (CG) capacitor, a TG_SENSE transistor, and a select transistor. To reduce the MTP cell size, the tunnel gate (TG) oxide and sense transistor are merged into a single TG_SENSE transistor; only two p-wells are used - one for the TG_SENSE and sense transistors and the other for the CG capacitor; moreover, only one deep n-well is used for the 256-bit MTP cell array. In addition, a three-stage voltage level translator, a VNN charge pump, and a VNN precharge circuit are newly proposed to secure the reliability of 5 V devices. Also, a dual memory structure, which is separated into a designer memory area of $1row{\times}64columns$ and a user memory area of $3rows{\times}64columns$, is newly proposed in this paper.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.9 no.4
• /
• pp.419-427
• /
• 2016

In this paper, a 64b small-area MTP memory IP is designed. A VPPL (=VPP/3) regulator and a VNN (=VNN/3) charge pump are removed since the inhibit voltages of an MTP memory cell are all 0V instead of the conventional voltages of VPP/3 and VNN/3. Also, a VPP charge pump is removed since the VPP program voltage is supplied from an external pad. Furthermore, a VNN charge pump is designed to provide its voltage of -VPP as a one-stage negative charge pump using the VPP voltage. The layout size of the designed 64b MTP memory IP with MagnaChip's $0.18{\mu}m$ BCD process is $377.585{\mu}m{\times}328.265{\mu}m$ (=0.124mm2). Its DC-DC converter related layout size is 76.4 percent smaller than its conventional counterpart.

• Journal of IKEEE
• /
• v.28 no.1
• /
• pp.78-89
• /
• 2024

PMIC chips based on a BCD process used in automotive semiconductors require multi-time programmable (MTP) intellectual property (IP) that does not require additional masks to trim analog circuits. In this paper, MTP cell size was reduced by about 18.4% by using MTP cells using PMOS capacitors (PCAPs) instead of NMOS capacitors (NCAPs) in MTP cells, which are single poly EEPROM cells with two transistors and one MOS capacitor for small-area MTP IP design. In addition, from the perspective of MTP IP circuit design, the two-stage voltage shifter circuit is applied to the CG drive circuit and TG drive circuit of MTP IP design, and in order to reduce the area of the DC-DC converter circuit, the VPP (=7.75V), VNN (=-7.75V) and VNNL (=-2.5V) charge pump circuits using the charge pumping method are placed separately for each charge pump.

• Journal of IKEEE
• /
• v.24 no.1
• /
• pp.161-169
• /
• 2020

In order to reduce the manufacturing cost of MCU chips used in applications such as wireless chargers and USB-C, compared to DP-EEPROM (Double Poly EEPROM), which requires 3 to 5 additional process masks, it is even more necessary MTP(Multi-Time Programmable), which is less than one additional mask and have smaller unit cell size. In addition, in order to improve endurance characteristics and data retention characteristics of the MTP memory cell due to E/P(Erase / Program) cycling, the distribution of the V_TP(Program Threshold Voltage) and the V_TE(Erase Threshold Voltage) needs to be narrow. In this paper, we proposed a current-type BL S/A(Bit-Line Sense Amplifier) circuit, WM(Write Mask) circuit, BLD(BL Driver) circuit and a algorithm, which can reduce the distribution of program and V_T and erase V_T, through compare the target current by performing the erase and program pulse of the short pulse several times, and if the current specification is satisfied, the program or erase operation is no longer performed. It was confirmed that the 256Kb MTP memory fabricated in the Magnachip semiconductor 0.13㎛ process operates well on the wafer in accordance with the operation mode.

• Textile Coloration and Finishing
• /
• v.7 no.3
• /
• pp.38-43
• /
• 1995

To improve the biofunctional properties of silk fibroin membranes, 2-(methacryloyloxy)ethyl-2-(trimethylammonium)ethyl phosphate(MTP), which is a methacrylate with phospholipid polar groups grafted and poly(MTP-co-BMA) was coated on the surface of silk fibroin membranes. The permeability and biocompatibility of silk fibroin membranes with phosphoryl choline group were investigated. The permeability of a salt(NaCl) was increased with grafting by MTP. Futhermore, the poly(MTP-co-BMA)-coated silk fibroin membranes displayed less blood cell adhesion than the silk fibroin membranes.

• Textile Coloration and Finishing
• /
• v.7 no.2
• /
• pp.63-69
• /
• 1995

To improve the blood compatibility of chitosan membranes, 2-(methacryloyloxy)-ethyl-2-(trimethylammonium)ethyl phosphate(MTP), which is a methacrylate with phospholipid polar groups, was grafted on the surface of chitosan membranes and the biocompatibility of MTP-grafted chitosan membranes was investigated. The permeation coefficient gradually decreased with increasing in molecular weights of biocomponents below 10$^{4}$, and drastically decreased above 10$^{4}$. This result corresponds with the permeability of solutes in case of hemodialysis membranes. The MTP-grafted chitosan membranes displayed less blood cell adhesion than the chitosan membranes. This may due to the formation of biomembrane4ike surface by adsorption and arrangement of phospholipid molecules from serum onto the MTP copolymer surface.

• Toxicological Research
• /
• v.18 no.3
• /
• pp.275-283
• /
• 2002

Fungal metabolite, gliotoxin is an epipolythiodioxopiperazin (ETP) class and has various roles including immunomodulatory and apoptotic effects. This study was designed to evaluate the mechanism by which gliotoxin exerts the apoptosis on human promyelocytic leukemic HL-60 cells. Herein, we demonstrated that the gliotoxin decreased the cell viability in a time-dependent manner Gliotoxin-induced cell death was confirmed us apoptosis characterized by chromatin condensation and ladder-pattern fragmentation of genomic DNA. Gliotoxin increased the catalytic activities of caspase-3 and caspase-9. Activation of caspase-3 was further confirmed by degradation of procaspase-3 and poly(ADP-ribose) polymerase (PARP) by gliotoxin in HL-60 cells. Furthermore, gliotoxin induced the changes of mitochondrial transmembrane potential (MTP). Antioxidants, including GSH and NAC, markedly inhibited apoptosis with conistent suppression of enzymatic activity of caspase-3, caspase-9, and MTP loss in gliotoxin-treated cells. Taken together, we suggest that gliotoxin function as an oxidant and ploys proapoptotic roles in HL-60 cells via activation of intrinsic caspase cascades as well as mitochondrial dysfunction.

• Biomolecules & Therapeutics
• /
• v.12 no.1
• /
• pp.25-33
• /
• 2004

In this study we investigated whether ATP loss was involved in the potentiated death of immunostimulated rat primary astrocytes in glucose-deprived condition. Rat primary astrocytes immunostimulated with LPS plus IFN-${\gamma}$ for 48 h underwent death upon glucose deprivation, which dependent on the production of peroxynitrite. Intracellular ATP level synergistically decreased by glucose deprivation in immunostimulated astrocytes but not in control cells, and the loss of ATP occurred well ahead of the LDH release. The synergistic cell death and ATP loss by immunostimulation and glucose deprivation were inhibited by iNOS inhibitor (L-NAME and L-NNA) or peroxynitrite decomposition catalyst (also a superoxide anion scavenger), Mn(III)tetrakis(N-methyl-4'-pyridyl)porphyrin (MnTMPyP). Exogenous addition of peroxynitrite generator, SIN-l timedependently induced ATP loss and cell death in the glucose-deprived astrocytes. Depletion of intracellular glutathione (GSH) and dis겨ption of mitochondrial transmembrane potential (MTP) were also observed under same conditions. Supply cellular ATP by the addition of exogenous adenosine or ATP during glucose deprivation inhibited ATP depletion, GSH depletion, MTP disruption and cell death in SIN-l treated or immunostimulated astrocytes. This study showed that perturbation in the regulation of intracellular ATP level in immunostimulated astrocytes might make them more vulnerable to energy challenging stimuli.