• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.122-122
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• 2009

최근 PC의 성능이 향상되면서, 고성능의 전원공급 장치가 요구되고 있다. 특히 CPU에 대전력을 공급하는 싱크로너스 벅 컨버터는 파워 MOSFET을 구동하기 위해 별도의 구동 IC가 필요하다. 본 논문은 adaptive 지연을 이용하여 파워 MOSFET을 구동하는 싱크로너스 벅 구동 IC를 설계하였다. 고정밀도의 밴드캡 기준회로와 비교기를 이용하여 30 ns의 adaptive 지연을 생성하며, 전력소모를 줄이기 위해 저전압에서 동작하는 UVLO(under voltage lock out)를 설계하였다. 또한 상단 파워 MOSFET을 구동하기 위하여 부트스트랩 방식을 이용하며, 부트스트랩 다이오드를 IC 내부에 내장하여 컨버터의 설계비용을 줄였다. 설계한 구동 IC의 동작 전압 범위는 8 V - 15 V이며, 출력 전류는 최대 2A이다. 싱크로너스 벅 구동 IC는 $0.5\;{\mu}m$ BiCMOS(Bipolar-CMOS) 공정 파라미터를 사용하여 설계되었으며, 시뮬레이션은 Cadence사의 Spectre를 이용하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.474-480
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• 2003

We designed and tested a new scan driver output stage. Compared to conventional CMOS structured scan driver IC′s, the new NMOSFET-only scan driver circuit can reduce the chip area and therefore, the chip cost considerably. We confirmed the circuit operation with open drain power NMOSFET IC′s by driving 2"PDP test panel. We defined critical device parameters and their optimization methods lot the best circuit performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.719-726
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• 2008

In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

• ETRI Journal
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• v.38 no.4
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• pp.645-653
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• 2016

This paper demonstrates the performance of a metal-substrate power module with multiple fabricated chips for a high current electrical application, and evaluates the proposed module using a 1.5-kW sinusoidal brushless direct current (BLDC) motor. Specifically, the power module has a hybrid structure employing a single-layer heat-sink extensible metal board (Al board). A fabricated motor driver IC and trench gate DMOSFET (TDMOSFET) are implemented on the Al board, and the proper heat-sink size was designed under the operating conditions. The fabricated motor driver IC mainly operates as a speed controller under various load conditions, and as a multi-phase gate driver using an N-ch silicon MOSFET high-side drive scheme. A fabricated power TDMOSFET is also included in the fabricated power module for three-phase inverter operation. Using this proposed module, a BLDC motor is operated and evaluated under various pulse load tests, and our module is compared with a commercial MOSFET module in terms of the system efficiency and input current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.9-9
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• 2010

In this paper, High Brightness LED driver IC using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses $1{\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre(Cadence) simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.11-12
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• 2009

In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.71-80
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• 1999

In this paper, a power MOSFET driver with protection circuits is designed using a 2${\mu}m$ high-voltage CMOS process. For stable operations of control circuits a power managing circuit is designed, and a voltage-detecting short-circuit protection(VDSCP) is proposed to protect a voltage regulator in the power control circuit. The proposed VDSCP scheme eliminates voltage drop caused by a series resistor, and turns off output current under short-circuit state. To protect a power MOSFET, a short-load protection, a gate-voltage limiter, and an over-voltage protection circuit are also designed A high voltage 2 ${\mu}m$ technology provides the breakdown voltage of 50 V. The driver consumes the power of 20 ~ 100 mW along its operation state excluding the power of the power MOSFET. The active area of the power MOSFET driver occupies $3.5 {\times}2..8mm^2$.

• Journal of Satellite, Information and Communications
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• v.8 no.2
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• pp.36-43
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• 2013

In this study, the high current behaviors and double snapback mechanism of gate grounded_extended drain n-type MOSFET(GG_EDNMOS) device were analyzed in order to realize the robust electrostatic discharge(ESD) protection performances of high voltage operating display driver IC(DDIC) chips. Both the transmission line pulse(TLP) data and the thermal incorporated 2-dimensional simulation analysis as a function of ion implant conditions demonstrate a characteristic double snapback phenomenon after triggering of bipolar junction transistor(BJT) operation. Also, the background carrier density is proven to be a critical factor to affect the high current behavior of the GG_EDNMOS devices.

• Proceedings of the IEEK Conference
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• 2003.11c
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• pp.309-312
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• 2003

In this study, the electrical characteristic of Symmetric high voltage MOSFET (SHVMOSFET) for display driver IC were investigated. Measurement data are taken over range of temperature (300K-400K) and various extended drain length. In high temperature condition(>400K), drain current decreased over 20％, and specific on-resistance increased over 30％ in comparison with room temperature.