Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)
- 2003.11c
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- Pages.309-312
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- 2003
A study on the reliability test of Symmetric high voltage MOSFET under the extended source/drain length
Symmetric high voltage MOSFET의 extended source/drain 길이에 따른 전기적 특성의 고온영역 신뢰성 분석
Abstract
In this study, the electrical characteristic of Symmetric high voltage MOSFET (SHVMOSFET) for display driver IC were investigated. Measurement data are taken over range of temperature (300K-400K) and various extended drain length. In high temperature condition(>400K), drain current decreased over 20%, and specific on-resistance increased over 30% in comparison with room temperature.
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