A study on the reliability test of Symmetric high voltage MOSFET under the extended source/drain length

Symmetric high voltage MOSFET의 extended source/drain 길이에 따른 전기적 특성의 고온영역 신뢰성 분석

  • Published : 2003.11.01

Abstract

In this study, the electrical characteristic of Symmetric high voltage MOSFET (SHVMOSFET) for display driver IC were investigated. Measurement data are taken over range of temperature (300K-400K) and various extended drain length. In high temperature condition(>400K), drain current decreased over 20%, and specific on-resistance increased over 30% in comparison with room temperature.

Keywords