Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Design of the Driver IC for 500 V Half-bridge Converter using Single Ended Level Shifter with Large Noise Immunity

잡음 내성이 큰 단일 출력 레벨 쉬프터를 이용한 500 V 하프브리지 컨버터용 구동 IC 설계

  • 박현일 (경상대학교 전자공학과, 공학연구원) ;
  • 송기남 (경상대학교 전자공학과, 공학연구원) ;
  • 이용안 (경상대학교 전자공학과, 공학연구원) ;
  • 김형우 (한국전기연구원 고집적전원연구그룹) ;
  • 김기현 (한국전기연구원 고집적전원연구그룹) ;
  • 서길수 (한국전기연구원 고집적전원연구그룹) ;
  • 한석봉 (경상대학교 전자공학과, 공학연구원)
  • Published : 2008.08.01
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Abstract

In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

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References

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