• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.7-11
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• 2007

This paper presents a multiband octa-phase LC VCO for SDR receiver. Four identical LC VCOs are connected by using series coupling transistor to obtain the octa-phase signal and low phase noise characteristic. For a multiband application, a band tuning circuit that consists of a switch capacitor circuit and two MOS varactors is proposed. As the MOS switch is on/off state, the frequency range will be varied. In addition, two varactors make the VCO be immune to process variation of the oscillation frequency. The VCO is designed in 0.18-um CMOS technology, consumes 12mA current from 1.8V supply voltage and operates with a frequency band from 885MHz to 1.342GHz (41% tuning range). As driving sub-harmonic mixer, the proposed VCO covers 3 standards(CDMA 2000 1x, WCDMA, WiBro). The measured phase noise is -105dBc@100kHz, -115dBc@1MHz, -130dBc@10MHz for CDMA 2000 1x, WCDMA, WiBro respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.116-126
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• 1994

In this paper, the switch-level fault simulator for CMOS circuits with a gate-to-drain/source short fault is implemented. A fault model used in this paper is based on the graphical analysis of the electrical characteristics of the faulty MOS devices and the conversion of the faulty CMOS circuit to the equivalent faulty CMOS inverter in order to find its effect on the successive stage. This technique is very simple and has the increased accuracy of the simulation. The simulation result of the faulty circuit using the implemented fault simulator is compared with the result of the SPICE simulation.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.489-490
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• 2006

This paper presents a switch type 2.4/5.8 GHz dual band low-noise amplifier, designed with $0.13{\mu}m$ RF CMOS technology. Using MOS switch allows the LNA to have two different input transconductance and output capacitance modes. Given supply voltage of 1.2 V, the simulation exhibits gains of 8.1 dB and 17.1 dB, noise figures of 3.1 dB and 2.57 dB and power consumptions of 13.0 mW and 10.2 mW at 2.4 GHz and 5.8 GHz, respectively.

• ETRI Journal
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• v.33 no.6
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• pp.880-886
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• 2011

With the introduction of high-current 8-inch solar cells, conventional Schottky bypass diodes, usually adopted in photovoltaic (PV) panels to prevent the hot spot phenomenon, are becoming ineffective as they cause relatively high voltage drops with associated undue power consumption. In this paper, we present the architecture of an active circuit that reduces the aforementioned power dissipation by profitably replacing the bypass diode through a power MOS switch with its embedded driving circuitry. Experimental prototypes were fabricated and tested, showing that the proposed solution allows a reduction of the power dissipation by more than 70% compared to conventional Schottky diodes. The whole circuit does not require a dedicated DC power and is fully compatible with standard CMOS technologies. This enables its integration, even directly on the panel, thereby opening new scenarios for next generation PV systems.

• Proceedings of the Korean Information Science Society Conference
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• 1998.10a
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• pp.326-328
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• 1998

본 논문에서는 다양한 통신망을 통합 관리하기위해 ISO 및 ITU-T에서 권고하고 있는 CMIP기반의 TMN체계를 따른 ATM/B-ISDN망 관리에 있어서 에이전트 플랫폼위에 개발된 GUI 기반의 관리 객체 개발환경(MODE)을 이용한다. MODE를 이용하여 ATM스위치 관리를 위한 GDMO(Guidelines For DEFINITION of Managed Object) source를 입력받아 관리 객체 생성 구현 방법을 제시한다. MODE는 크게 GDMO Compiler, SDC Development, Database(DB)로 구성된다.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.3
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• pp.53-59
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• 1994

A new fully differential sample-and-hold circuit which can effectively compensate the offset voltage of an operational amplifier and the charge injection of a MOS switch is presented. The proposed circuit shows a true sample-and-hold function without a reset period or an input-track period. The prototype fabricated using a 1.2$\mu$m double-polysilicon CMOS process occupies an area of 550$\mu$m$\times$288$\mu$m and the error of the sampled ouput is 0.056% on average for 3V input at DC.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.212-214
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• 2005

The charge-pump circuit which is used to generate higher voltage than the available supply voltage has wide applications such as the flash memory of EEPROM Because the demand for high voltage comes from physical mechanism such as the oxide tunneling, the required pumped voltage cannot be scaled as the power supply voltage is scaled. Therefore, an efficient charge-pump circuit that can achieve high voltage from the available low supply voltage is essential. A new Analog Switch p-well CMOS charge pump circuit without the MOS device body effect is processed. By improve the structure of the circuit's transistors to reduce the threshold voltage shift of the devices, the threshold voltage of the device is kept constant. So, the circuit electrical characteristics are higher output voltage within a shorter time than the conventional charge pump. The propose analog switch CMOS charge pump shows compatible performance of the ideal diode or Dickson charge pump.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.667-670
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• 2010

In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.12
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• pp.6-13
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• 2009

For X-band phased array systems, a power amplifier, a 6-bit phase shifter, a 6-bit digital attenuator, and a SPDT transmit/receive (T/R) switch are fabricated and measured. All circuits are demonstrated by using CMOS 0.18 um technology. The power amplifier has 2-stage differential and cascade structures. It provides 1-dB gain-compressed output power ($P_{1dB}$) of 20 dBm and power-added-efficiency (PAE) of 19 % at 8-11 GHz frequencies. The 6-bit phase shifter utilizes embedded switched filter structure which consists of nMOS transistors as a switch and meandered microstrip lines for desired inductances. It has $360^{\circ}$ phase-control range and $5.6^{\circ}$ phase resolution. At 8-11 GHz frequencies, it has RMS phase and amplitude errors are below $5^{\circ}$ and 0.8 dB, and insertion loss of $-15.7\;{\pm}\;1,1\;dB$. The 6-bit digital attenuator is comprised of embedded switched Pi-and T-type attenuators resistive networks and nMOS switches and employes compensation circuits for low insertion phase variation. It has max. attenuation of 31.5 dB and 0.5 dB amplitude resolution. Its RMS amplitude and phase errors are below 0.4 dB and $2^{\circ}$ at 8-11 GHz frequencies, and insertion loss is $-10.5\;{\pm}\;0.8\;dB$. The SPDT T/R switch has series and shunt transistor pairs on transmit and receive path, and only one inductance to reduce chip area. It shows insertion loss of -1.5 dB, return loss below -15 dB, and isolation about -30 dB. The fabricated chip areas are $1.28\;mm^2$, $1.9mm^2$, $0.34\;mm^2$, $0.02mm^2$, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1363-1374
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• 2009

This paper reviews the characteristics and technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.